Deposition plasma

Chinn J A, Horbett T A, Ratner B D, Sohway M B, Hague Y and Hausohka S D 1989 Enhanoement of serum fibroneotin adsorption and the olonal plating of swiss mouse-3T3 fibroplast and MM14-mouse myoblast sells on polymer substrates modified by radiofrequenoy plasma deposition J. Colloid Interface Sol. 127 67-87... 

Ratner B D, Chilkoti A and Lopez G P 1990 Plasma deposition and treatment for biomaterial applications... 

Plasma Deposition, Treatment and Etching of Polymers ed R d Agostino (Boston, MA Academic) pp 463-516... 

Plasma-deposited siUcon nitride contains large amounts of hydrogen, typically in the range of 20—25 atomic % H, and has polymer-like properties. The electrical resistivity of the film depends on the deposition temperature, the film stoichiometry, and the amounts of hydrogen and oxygen in the film. 

S. Sivaram, Principles of Chemical Vapor Deposition Thermal Plasma Deposition of Electronic Materials, Van Nostrand Reinhold, New York, 1995. 

J. Mort and F. Jansen, Plasma Deposited Thin Films, Franklin Book Co., Inc., Elkins Park, Pa., 1986. 

G. Bmno, P. Cape22uto, and A. Madan, eds.. Plasma Deposition of Amorphous Silicon Based Materials, Academic Press, Inc., New York, 1995. 

In the plasma deposition process, siUcon tetrachloride vapor is passed through an induction-coupled plasma torch using a hydrogen-free oxygen... 

A. M. Wrobel and M. R. Wertheimer, iu R. d Agostiuo, ed., PLasma Deposition, Treatment and Etching ofPoLjmers, Academic Press, Inc., San Diego, Calif., 1990. 

Inorganic monomers can be used to plasma-deposit polymer-type films (16). At high plasma energies, the monomers are largely decomposed and can be used to form materials such as amorphous hydrogen-containing siUcon films from SiH for thin-film solar-ceU materials. 

While plasma deposits are widely used, especially in the American aero industry to provide wear resistance, there is not at the moment any great demand for the exotic materials deposited to be used as a protection against corrosion. However, M. A. Levinstein of General Electric (USA) reports the successful use of sprayed chromium carbide as a protection for ventilator blades operating in corrosive conditions. 

The most common frequencies in use for CVD are micro-wave (MW) at 2.45 GHz and, to a lesser degree, radio frequency (RF) at 13. 45 MHz (the use of these frequencies must comply with federal regulations). A microwave-plasma deposition apparatus (for the deposition of polycrystalline diamond) is shown schematically in Fig. 5.18 (see Ch. 7, Sec. 3.4). 

Limitations of ECR Plasma. The limitations of ECR plasma are a more difficult process control and more costly equipment due to the added complication of the magnetic field. In addition, lower pressure (10 to 10 Torr) is required, as opposed to 0.1 to 1 Torr for RF plasma deposition, as well as the need for a high-intensity magnetic field. Since there is the added variable of the magnetic field, the processing is more difficultto control. 

Microwave-Plasma Deposition. The operating microwave frequency is 2.45 GHz. A typical microwave plasma for diamond deposition has an electron density of approximately 10 electrons/m, and sufficient energy to dissociate hydrogen. A microwave-deposition reactor is shown schematically in Fig. 5.18 of Ch. 5.P ]P°]... 

By increasing the electrical energy in a fixed amount of gas, the temperature is raised and may reach 5000°C or higher.P i Such high temperatures produce an almost complete dissociation of the hydrogen molecules, the CH radicals, and other active carbon species. From this standpoint, arc-plasma deposition has an advantage over microwave-plasma or thermal CVD since these produce much less atomic hydrogen. 

Deposition from silane (SiH4) at low pressure (1 to 15 mTorr) at 750-800°C and by plasma deposition with a temperature range of 600-800°C.[ " ]l l... 

Huelsman, A. D., and Reif, R., Plasma Deposition of GaAs Epitaxial Films from Metal-Organic Sources, Proc. 10th Int. Conf. on CVD, (G. Cullen, ed.), pp. 792-802, Electrochem. Soc., Pennington, NJ 08534 (1987)... 

Chemical Vapor Deposition and Plasma Deposition/Etching of Thin Films... 

Catherine, U., and Couderc, C., "Electrical Characteristics and Growth Kinetics in Discharges Used for Plasma Deposition of Amorphous Carbon, Thin Solid Films, Vol. 144, 1986, pp. 265-280. 

Koidl, R, Wild, Ch., Dischler, B., Wagner, J., and Ramsteiner, M., Plasma Deposition, Properties and Structure of Amorphous Hydrogenated Carbon Films, Mater. Sci. Forum, Vol. 

A complete model for the description of plasma deposition of a-Si H should include the kinetic properties of ion, electron, and neutral fluxes towards the substrate and walls. The particle-in-cell/Monte Carlo (PIC/MC) model is known to provide a suitable way to study the electron and ion kinetics. Essentially, the method consists in the simulation of a (limited) number of computer particles, each of which represents a large number of physical particles (ions and electrons). The movement of the particles is simply calculated from Newton s laws of motion. Within the PIC method the movement of the particles and the evolution of the electric field are followed in finite time steps. In each calculation cycle, first the forces on each particle due to the electric field are determined. Then the... 

FIG. 51. Schematic representation of the processes occurring in a SiH4-Hs discharge and the various particles present in the energy and material balances. (After J. Perrin, in Plasma Deposition of Amorphous Silicon-Based Materials." (G. Bruno. P. Capezzuto. and A. Madan. Eds.). Chap. 4. p. 177. Academic Press. Boston (1995).]... 

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