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Possible plasma chemical vapor deposition method

The determination of specific phosphorus compounds in thin films is important. Only through wet chemical analysis was it possible to first discover the presence and then to accurately measure the quantities of P2Os, P203, and phosphine found in plasma, plasma-enhanced, LPO-LTO (low-pressure oxide-low-temperature oxide), and CVD (chemical vapor deposition) processes (3). Methods such as X-ray or FTIR spectroscopy would have seen all phosphorus atoms and would have characterized them as totally useful phosphorus. In plasma and plasma-enhanced CVD films, phosphine is totally useless in doping processes. [Pg.517]

Table 7.2 summarizes various subtypes of CVD polymerization processes. These methods differ in the means by which the CVD chemistry is driven (plasma, thermal, or UV). For hot wire chemical vapor deposition (HWCVD) and initiated chemical vapor deposition (iCVD), no plasma excitation or UV exposure is utilized during the polymerization, eliminating the possibility for forming defects in the films via these... [Pg.133]


See other pages where Possible plasma chemical vapor deposition method is mentioned: [Pg.345]    [Pg.495]    [Pg.477]    [Pg.129]    [Pg.2134]    [Pg.455]    [Pg.35]    [Pg.390]    [Pg.465]    [Pg.147]    [Pg.330]    [Pg.517]    [Pg.19]    [Pg.525]   
See also in sourсe #XX -- [ Pg.545 ]




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