Auger analysis

Yes, in combination with ion-beam sputtering 300 A for Auger analysis, even less for imaging Yes, called Scanning Auger Microscopy, SAM Sample requirements Vacuum-compatible materials Main use Elemental composition of inorganic materials... 

Auger analysis of small features. The primary electron beam column is similar to that in electron microscopes, and it may contain both electrostatic and magnetic lenses for beam focussing as well as quadrupole deflectors for beam steering and octopole lenses for beam shaping. 

The electrodeposited precursor films prepared in our laboratory that produced high-efficiency devices were Cu-rich films. These precursor films required additional In, Ga, and Se, deposited by PVD, to adjust their final composition to Culni xGaxSe2. During this second step, the substrate temperature was maintained at 560 °C 10 °C. Figure 7.7 presents the Auger analysis of the final absorber and shows nonuniform distribution of Ga in the absorber and more Ga near the surface. This result is primarily from the second-stage PVD addition. The Ga hump is not helpful for hole collection. The device efficiencies are expected to increase by optimizing the Ga distribution in the absorber layers. The optimized layers should have less Ga in the front and more Ga on the back, which facilitates hole collection. 

Figure 7.7. Auger analysis of the CIGS absorber layer. [Reproduced with permission from Ref. 78(b). Copyright 2000 Elsevier.]...

Ru electrodes were prepared as previously described by plating Ru metal onto spectroscopic carbon rods, except for the electrode used for Auger analysis (before and after carbon dioxide reduction) which was plated on Ti (2.). Cu electrodes were prepared from Cu foil as previously described (Kim, J. J. Summers, D. P. Frese, K. W., Jr. J. Electroanal- Chem. in press.). Each entry in the tables and figures was obtained on different days with the electrode kept in ordinary laboratory air overnight between runs. 

The Auger and XPS analysis and interpretation of the posttreatment on iron phosphate surfaces was conducted by Dr. J. A. Kramer of Parker Chemical Company. Auger analysis was performed... 

Myhra, S., Delogu, P., Giorgi, R. Riviere, J. C. 1988c. Scanning and high-resolution Auger analysis of zirconolite/perovskite surfaces following hydrothermal treatment. Journal of Materials Science, 23, 1514-1520. 

In order to precise the effect of sulfur, an Auger analysis of the surface has been performed by transferring the sample in an ultra high vacuum chamber right before the... 

The Auger analysis performed right before the catalytic test confirms that the reaction is not poisoned by either an oxygen or a carbon monolayer on the surface. 

Auger analysis and ESCA (electron spectroscopy for chemical analysis) of the cleaned wafers showed no contaminants. However, the ammonium hydroxide solution produced a high mobile-ion content in the grown films. 

TABLE 3. Auger analysis of Cu3Si after reaction at 277 °C71... 

As with all surface analytical methods, surface preparation is critical to obtaining reproducible SHG from metallic surfaces and single crystals in particular. For surfaces prepared in UHV and then transferred to an electrochemical cell, sputtering and heating or annealing followed by Auger analysis of impurities should proceed inert transfer. Low energy electron diffraction (LEED) can also be used to check surface order. Metal electrode surfaces, particularly for the rotational anisotropy ex-... 

As with ESCA, Auger analysis can detect all elements heavier than helium. The quantitative presentation shown in Figure 25 can only be done when suitable standards are available. Since the Auger spectra depend secondarily on how the atom is bound in the thin film, it is not always possible to secure accurate standards so that absolute determination of elemental concentrations can be inaccurate. Also, the Auger technique is not very sensitive, and in this regard, is similar to ESCA. Concentrations of an element less than 0.5 atomic % cannot be predicted reliably. 

Two sources of n-Si wafers, coated with 3.7-6.6 nm layers of SiOxNy ( y), were used with comparable results. From Auger analysis, it follows that upon using these materials as photoanodes in wet PEC cells, the already low photocurrents (of the order of 10 8 A/cm2) decrease upon operation by oxidation of the coated electrode, whereby x increases at the exoense of y and by oxidation of Si. The starting SiOxNy layers already have avery high resistance (1.9. l o13 fi.cm- ). This resistivity must be diminished for more efficient operation. Two routes have been followed ... 

Fig. 19 Schematic representation of a SiC/Ta/steel systems deduced from SIMS and Auger analysis, including the possible site of debonding failure.

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