Ion-beam sputtering

Ion-beam lithography Ion beam mixing Ion beam processing Ion beams Ion-beam sputtering Ion channels Ion chromatogram Ion chromatography... 

Yes, in combination with ion-beam sputtering 300 A for Auger analysis, even less for imaging Yes, called Scanning Auger Microscopy, SAM Sample requirements Vacuum-compatible materials Main use Elemental composition of inorganic materials... 

A few mm in direct plasma sputtering 0.1—10 pm using separate, focused primary ion-beam sputtering... 

Auger electron spectroscopy (AES) is a technique used to identify the elemental composition, and in many cases, the chemical bonding of the atoms in the surface region of solid samples. It can be combined with ion-beam sputtering to remove material from the surface and to continue to monitor the composition and chemistry of the remaining surface as this surface moves into the sample. It uses an electron beam as a probe of the sample surface and its output is the energy distribution of the secondary electrons released by the probe beam from the sample, although only the Ai er electron component of the secondaries is used in the analysis. 

AES analysis is done in one of four modes of analysis. The simplest, most direct, and most often used mode of operation of an Auger spectrometer is the point analysis mode, in which the primary electron beam is positioned on the area of interest on the sample and an Auger survey spectrum is taken. The next most often used mode of analysis is the depth profiling mode. The additional feature in this mode is that an ion beam is directed onto the same area that is being Auger analyzed. The ion beam sputters material off the surface so that the analysis measures the variation, in depth, of the composition of the new surfaces, which are being continu-... 

Abstract The principles of coatings to either enhance reflectivity of mirrors or to enhance transmission of glass optics are described. Then the ion assisted deposition and ion beam sputtering techniques are addressed. Performances of these technique-sand their limitations are illustrated with the characteristics of the VIRGO mirrors coated at LMA. The importance of metrology is emphasized. 

Keywords dielectric coatings, metallic coatings, deposition, ion beam sputtering, ion as-... 

Figure 20. Schematic view of the ion beam sputtering (IBS) technique. See text.

A more detailed approach was used by Hammer, Victoria, and Alvarez [60], in the analysis of a-C(N) H films deposited by Ar+ ion-beam sputtering of graphite... 

Ion Beam Deposition The most commonly used vacuum method for the rapid deposition of films (thin or thick) is sputtering (2M. This can be combined with ion beam techniques in a variety of ways (25) including (Figure 18) ion beam sputter deposition (IBSD) eg of oxide films or of hard carbon (26). In reactive systems the reactive gas is added to the argon ion beam. The properties of the deposited materials are modified substantially by varying the gas composition (Figure 19). 

Figure 18. Ion beam sputter deposition apparatus for the production of hydrogenated amorphous carbon. (Reproduced with permission from Ref. 26, Copyright 1985, AIP).

Table V. Properties ofcr-Carbon and or-Silicon Produced by Ion Beam Sputter Deposition...

Figure 19. Film density as a function of hydrogen gas concentration in the (EU+Ar) beam during ion beam sputter deposition.

Other coating processes involving fluoridated apatite have been investigated to improve the long-term adhesion and promote osteointegration of cementless titanium-based metal implants pulsed laser deposition, electron beam deposition and ion beam sputter deposition techniques, and sol-gel methods, for example. They lead to fluor-containing calcium phosphates (apatites in most cases) with different compositions and crystallinity states. 

H. Zheng, K.K. Chittur, W.R. Lacefield, Dissolution/reprecipitation of calcium phosphate thin films produced by ion beam sputter deposition technique. Biomaterials 20(1999) 443- 51. 

Co—be/Cu 1.0 nm Co9Fe/1.0 nm Cu ion-beam sputtering on MgO(llO) substrates Co-Fe/Cu grew having inplanc uniaxial anisotropy, easy axis parallel to cube direction in the MgOO 10) plane saturation field (240 kA/m) at RT for GMR = 45%... 

Alternative vacuum deposition processes that have recently been developed offer potential advantages such as higher deposition rates, improved adhesion, or better control of film stress or morphology. These processes include ion-beam sputtering (134), ion-cluster evaporation (135, 136), and cathodic-arc deposition (137). 

Windischmann, H. (1987), An intrinsic stress scaling law for polycrystalline thin films prepared by ion beam sputtering , Journal of Applied Physics, 62, 1800-1807. 

Figure 9.15. Influence of sample cleaning on XPS scans taken on a thin-film superconductor, (a) Survey scan from an as-received surface, (b) Survey scan from surface after ion-beam (sputter) cleaning. Note the reduction in the Cls peak after cleaning, (c) Comparative Ba3d scans from both cases. Note the change in shape and size as the surface contaminant layers (probably containing carbonates and hydroxides of Ba in addition to other components) are removed. The peak shapes and intensities of other cations change, too. Initial data represent the composition and chemistry of the contaminant layer, whereas that from sputtered sample represents those of the pure underlying superconductor (possibly with sputter-induced changes that need to be accounted for).

Fig. 11.1. The scheme of the setup for composite film deposition by ion-beam sputtering of the compound target (1) substrate holder with heater (2) substrate (3) ion-beam source (4) shutter.

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