Very large scale integrated devices

Due to the need to increase the packing density in VLSIs (very large scale integrated devices), thermally stable, low-resistive contacts are becoming more and more important. These should also act as interdiffusion barriers to prevent junction failures. TiN has become attractive for silicon technology because of its high conductivity and its excellent properties as a barrier layer. The efficiency of TiN to prevent aluminum diffusion into silicon in Al/TiN/Si trilayers was ascertained up to temperatures of 550°C[14]. 

In the early days of CMP, when the process engineers had recognized that the planarization technology developed for very large-scale integration devices could also be of benefit for their MEMS structures, they transferred the processes almost one-to-one to their applications. But it showed very quickly that they had to adjust these processes to the specific manufacturing requirements of their structures. 

MOSFETs. The metal-oxide-semiconductor field effect transistor (MOSFET or MOS transistor) (8) is the most important device for very-large-scale integrated circuits, and it is used extensively in memories and microprocessors. MOSFETs consume little power and can be scaled down readily. The process technology for MOSFETs is typically less complex than that for bipolar devices. Figure 12 shows a three-dimensional view of an n-channel MOS (NMOS) transistor and a schematic cross section. The device can be viewed as two p-n junctions separated by a MOS capacitor that consists of a p-type semiconductor with an oxide film and a metal film on top of the oxide. 

Oxidation and diffusion continue to be important in submicrometer VLSI (very-large-scale integration) technology. Modem integrated devices require... 

This chapter gives explicit examples of how the techniques of wet (solution) chemistry can be applied to the production of integrated circuits. The quality control for processed thin films, chemicals, and pure water, along with microcontamination analysis, to resolve production problems are discussed. These examples indicate that wet chemical techniques are the only ones available for absolute standardization and measurement of trace metals and their effect on the devices produced by current very-large-scale-integration (VLSI) technology. 

If electro-optic modulators and directional couplers are to be driven by the electrical outputs from very large-scale integration (VLSI) semiconductor chips, then the required drive or VK voltages of EO devices must be less than 6 V (for... 

There exists a considerable literature on CVD (2) but relatively few attempts have been made to combine chemical and physical rate processes to give a complete representation of the deposition process. Most CVD studies have focused on demonstrating the growth of a particular material or crystal structure. However, the combined analysis is necessary in order to design CVD reactors where it is possible to deposit thin films of constant thickness and uniformity across an entire wafer. This is particularly important in the realization of submicron feature sizes for Very Large Scale Integrated Circuits. The further development of devices based on III-V compounds also depends on CVD reactor design improvements since the composition and thus the electronic properties of these materials vary considerably with process conditions. 

Advantages of Silicone Gel for Packaging of Devices with Very Large Scale Integration (VLSI)... 

Advanced Device Isolation for Very Large Scale Integration... 

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