Semiconductor silicone

SEMICONDUCTORS - SILICON-BASED SEMICONDUCTORS] (Vol 21) -gelatin in [GELATIN] (Vol 12)... 

J. B. Price, in H. R. Huff and R. R. Burgess, eds.. Semiconductor Silicon, The Electrochemical Society Proceedings Series, Electronics/Electrothermics and Metallurgy Division, Electrochemical Society, New York, 1973. 

The increase has, however, not been in direct proportion to the increase in the number of semiconductor devices produced, because manufacturing yields have increased dramatically since the sihcon transistor became commercially available in 1954 (see Electronic materials Semiconductors, silicon-BASEd). 

Even though silicon is metallic in appearance, it is not generally classified as a metal. The electrical conductivity of silicon is so much less than that of ordinary metals it is called a semiconductor. Silicon is an example of a network solid (see Figure 20-1)—it has the same atomic arrangement that occurs in diamond. Each silicon atom is surrounded by, and covalently bonded to, four other silicon atoms. Thus, the silicon crystal can be regarded as one giant molecule. 

HANDBOOKOF SEMICONDUCTOR SILICON TECHNOLOGY edited by William C.O Mara, Robert B. Herring, and Lee P. Hunt... 

In some cases, the parts to be coated (such as semiconductor silicon wafers) are stacked vertically. This minimizes particle contamination and considerably increases the loading capacity (as opposed to horizontal loading). 

Semiconductor Silicon Germaniun III-V II-VI compounds Diamond Silicon carbide Partially able to move 10-2 to 109... 

Interconnect. Three-dimensional structures require interconnections between the various levels. This is achieved by small, high aspect-ratio holes that provide electrical contact. These holes include the contact fills which connect the semiconductor silicon area of the device to the first-level metal, and the via holes which connect the first level metal to the second and subsequent metal levels (see Fig. 13.1). The interconnect presents a major fabrication challenge since these high-aspect holes, which may be as small as 0.25 im across, must be completely filled with a diffusion barrier material (such as CVD titanium nitride) and a conductor metal such as CVD tungsten. The ability to fill the interconnects is a major factor in selecting a thin-film deposition process. 

Fig. 59. Molecular modification of semiconductor silicon surfaces. Removal of the oxide generates a hydrogen-terminated layer that reacts with a range of molecular functional groups including alkenes. 

The semiconductor silicon obtains its remarkable properties upon doping with arsenic. Hence, practically all electronic devices contain this element. 

Power recovery, 20 139-143 Power recovery expander, 22 731 Power recovery systems process flow in, 22 730-731 types of, 22 729-730 PowerSearch software, 28 244, 250 Power semiconductors silicon-based, 22 260-261 silicon carbide in, 22 539-540 Power station design, 20 757 Power supplies... 

For the production of pure semiconductor silicon, silicon compounds such as chlorides are purified by distillation, and then transformed back to Si by chemical... 

Fig. 10-7. Photopotential as a function of electrode potential of n-type and p-type semiconductor silicon electrodes in an aqueous sulfate solution U = cell voltage before photoezcitation =...

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