Spatial resolution, SIMS

P. Marriott, S.B. Couling, and P.R. Chatker, High spatial resolution SIMS investigation of oxides formed on stainless steel under PWR conditions. Applied Surface Science 37 217-232,1989. 

SALI compares fiivorably with other major surface analytical techniques in terms of sensitivity and spatial resolution. Its major advantj e is the combination of analytical versatility, ease of quantification, and sensitivity. Table 1 compares the analytical characteristics of SALI to four major surfiice spectroscopic techniques.These techniques can also be categorized by the chemical information they provide. Both SALI and SIMS (static mode only) can provide molecular fingerprint information via mass spectra that give mass peaks corresponding to structural units of the molecule, while XPS provides only short-range chemical information. XPS and static SIMS are often used to complement each other since XPS chemical speciation information is semiquantitative however, SALI molecular information can potentially be quantified direedy without correlation with another surface spectroscopic technique. AES and Rutherford Backscattering (RBS) provide primarily elemental information, and therefore yield litde structural informadon. The common detection limit refers to the sensitivity for nearly all elements that these techniques enjoy. 

Scanning Auger Electron Spectroscopy (SAM) and SIMS (in microprobe or microscope modes). SAM is the most widespread technique, but generally is considered to be of lesser sensitivity than SIMS, at least for spatial resolutions (defined by primary beam diameter d) of approximately 0.1 im. However, with a field emission electron source, SAM can achieve sensitivities tanging from 0.3% at. to 3% at. for Pranging from 1000 A to 300 A, respectively, which is competitive with the best ion microprobes. Even with competitive sensitivity, though, SAM can be very problematic for insulators and electron-sensitive materials. 

By examining the sputtered neutral particles (the majority channel) using nons-elective photoionization and TOFMS, SALI generates a relatively uniform sensitivity with semiquantitative raw data and overcomes many of the problems associated with SIMS. Estimates for sensitivities vary depending on the lateral spatial resolution for a commercial liquid-metal (Ga ) ion gun. Galculated values for SALI... 

Like XPS, the application of AES has been very widespread, particularly in the earlier years of its existence more recently, the technique has been applied increasingly to those problem areas that need the high spatial resolution that AES can provide and XPS, currently, cannot. Because data acquisition in AES is faster than in XPS, it is also employed widely in routine quality control by surface analysis of random samples from production lines of for example, integrated circuits. In the semiconductor industry, in particular, SIMS is a competing method. Note that AES and XPS on the one hand and SIMS/SNMS on the other, both in depth-profiling mode, are complementary, the former gaining signal from the sputter-modified surface and the latter from the flux of sputtered particles. 

In nanotechnology, dimensions of interest are shrinking from the fiva to the nm range. For many microelectronic devices, such as laterally structured surfaces, particles, sensors, their physical as well as their chemical properties are decisively determined by their chemical composition. Its knowledge is mandatory for understanding their behavior, as well as for their successful and reliable technical application. This presents a challenge for TOF-SIMS, because of its demand for the unique combination of spatial resolution and sensitivity. 

TOF-SIMS has important potentials in many areas of life science, in fundamental and applied research as well as in product development and control. This holds for the characterization of biological cells and tissues, of sensor and microplate arrays, of drug delivery systems, of implants, etc. In all these areas, relevant surfaces feature a very complex composition and structure, requiring the parallel detect ion of many different molecular species as well as metal and other elements, with high sensitivity and spatial resolution requirements, which are exactly met by TOF-SIMS. 

There are two principal sources of reliable partitioning data for any trace element glassy volcanic rocks and high temperature experiments. For the reasons outlined above, both sources rely on analytical techniques with high spatial resolution. Typically these are microbeam techniques, such as electron-microprobe (EMPA), laser ablation ICP-MS, ion-microprobe secondary ion mass spectrometry (SIMS) or proton-induced X-ray emission (PIXE). 

Inert gas beams allow the chemistry of a surface to be studied by SIMS without modification by the bombarding species. The achievable values of source brightness allow pA currents into spot diameters of approximately 50 pm for dynamic SIMS, or nA currents into spot diameters < 5 pm for imaging SIMS. For greater spatial resolution a different, higher-brightness source must be used. 

Imaging SIMS. Steeds et al. (1999) included this technique in their study of the distribution of boron introduced into diamond, where it is a well-established dopant that controls the electrical conductivity. SIMS was performed with a field-emission liquid gallium ion source interfaced to a magnetic sector mass spectrometer capable of about 0.1 pm spatial resolution. 

The second advantage is the possibility of performing chemical imaging analyses. Even if other techniques, such as matrix-assisted laser desorption/ionization, also allow images to be acquired, ToF-SIMS is, for now, the mass spectrometric technique with the best spatial resolution performance. 

TOF-SIMS has been employed for the characterization of a wide range of materials, including metallic, salt, organometallic, organic, and polymeric substances, as well as for electronics, catalysts, and forensic samples. The ability to image molecular ions with submicrometer spatial resolution makes TOF-SIMS well suited to analysis of pharmaceuticals and biological cells, as well as for use in biotechnology and molecular electronics. 

What are the two advantages of using ions as bombarding particles in desorption ionization (SIMS) (an ion beam can be focused for improved spatial resolution and can be rastered for imaging applications). 

Other localization methods rely on mass spectrometry in vaporized parts of the sample such as secondary ion mass spectrometry, SIMS, and other techniques [77, 78]. Here, atomic boron is detected. In addition, the specific electron shell energy of boron (usually the K shell) can be used for visualization [66, 79]. A combination of quantitative techniques with suboptimal spatial resolution and the high-resolution detection methods can give an indication about the radiation response to be expected. All these techniques require, however, that the compound in ques-... 

Time of flight ion probes (TOF SIMS) have unique capabilities not found in other mass spectrometers. A pulsed ion beam, typically either cesium or gallium, ejects atoms and molecules from the sample. Ionized species are accelerated down the flight tube and the arrival time in the detector is recorded, giving the mass of the species (see discussion of time-of-flight mass analyzers above). TOF SIMS instruments used in cosmochemistry have spatial resolutions of <1 pm. They are used to determine elemental abundances in IDPs and Stardust samples. The spatial distribution of elements within a small sample can also be determined. TOF SIMS instruments can obtain good data with very little consumption of sample. 

Depth profiles of matrix elements on Mn- and Co-perovskite layers of fuel cathodes have been measured by LA-ICP-MS in comparison to other well established surface analytical techniques (e.g., SEM-EDX).118 On perovskite layers at a spatial resolution of 100p.m a depth resolution of 100-200 nm was obtained by LA-ICP-MS. The advantages of LA-ICP-MS in comparison to other surface analytical techniques (such as XPS, AES, SIMS, SNMS, GD-OES, GDMS and SEM-EDX) are the speed, flexibility and relatively low detection limits with an easy calibration procedure. In addition, thick oxide layers can be analyzed directly and no charging effects are observed in the analysis of non-conducting thick layers. 

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