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Solid semiconductor

The beginnings of the enormous field of solid-state physics were concisely set out in a fascinating series of recollections by some of the pioneers at a Royal Society Symposium (Mott 1980), with the participation of a number of professional historians of science, and in much greater detail in a large, impressive book by a number of historians (Hoddeson et al. 1992), dealing in depth with such histories as the roots of solid-state physics in the years before quantum mechanics, the quantum theory of metals and band theory, point defects and colour centres, magnetism, mechanical behaviour of solids, semiconductor physics and critical statistical theory. [Pg.45]

In the solid, electrons reside in the valence band but can be excited into the conduction band by absorption of energy. The energy gap of various solids depends upon the nature of the atoms comprising the solid. Semiconductors have a rather narrow energy gap (forbidden zone) whereas that of insulators is wide (metals have little or no gap). Note that energy levels of the atoms "A" are shown in the valence band. These will vary depending upon the nature atoms present. We will not delve further into this aspect here since it is the subject of more advanced studies of electronic and optical materieds. [Pg.41]

Fig. 1-3. Probability density of electron energy distribution, fli), state density, D(t), and occupied electron density. Die) fit), in an allowed energy band much higher than the Fermi level in solid semiconductors, where the Boltzmann function is applicable. Fig. 1-3. Probability density of electron energy distribution, fli), state density, D(t), and occupied electron density. Die) fit), in an allowed energy band much higher than the Fermi level in solid semiconductors, where the Boltzmann function is applicable.
This same theoretical approach can also apply to the space charge layer formed in solid semiconductors. Instead of the concentration of ions in aqueous solution, however, the concentration of electrons or holes is used with the space charge layer in semiconductors. Then, the Debye length is given by Eqn. 5-7 ... [Pg.132]

Ionization in a Solid (Semiconductor Detectors) In a semiconductor radiation detector, incident radiation interacts with the detector material, a semiconductor such as Si or Ge, to create hole-electron pairs. These hole-electron pairs are collected by charged electrodes with the electrons migrating to the positive electrode... [Pg.538]

Similar to the molecular photosensitizers described above, solid semiconductor materials can absorb photons and convert light into electrical energy capable of reducing C02. In solution, a semiconductor will absorb light, and the electric field created at the solid-liquid interface effects the separation of photo-excited electron-hole pairs. The electrons can then carry out an interfacial reduction reaction at one site, while the holes can perform an interfacial oxidation at a separate site. In the following sections, details will be provided of the reduction of C02 at both bulk semiconductor electrodes that resemble their metal electrode counterparts, and semiconductor powders and colloids that approach the molecular length scale. Further information on semiconductor systems for C02 reduction is available in several excellent reviews [8, 44, 104, 105],... [Pg.305]

Institute of Physics of Solids Semiconductors, Academy of Sciences, 220072 Minsk,... [Pg.185]

Out of various nanoassemblies, nano- and microcrystalline solid semiconductors deserve a particular attention due to their specific spectroscopic, photochemical, and photocatalytic properties. These properties derive from the nature of the semiconductor s excited states. [Pg.85]

To discuss the properties of semiconductors from a chemical perspective, it is important to first understand the structures of semiconducting solids. Semiconductors comprise a diverse group of inorganic materials and exhibit a variety of different Crystal Structures. The most basic semiconductor structure is based on the interpenetration of two face-centered cubic (fee) lattices. A familiar, nonsemiconducting solid that adopts this structure is NaCl, where the Na+ cations constitute one fee lattice and the Cl anions constitute the other (Figure 1(a)). Many specific crystal structures of semiconductors are related to this basic face-centered cubic lattice. [Pg.4359]

One of the most relevant activators is traces of solid semiconductors present in atmospheric or hydrospheric compartments. This role may be played not only by typical semiconductors but also by many different substances even dessert sand and volcanic ash (23-25,269-271). [Pg.334]

Figure 1. Band bending in n- and /7-doped semiconductors. (The vertical line represents the interface between the solid semiconductor on the left and a contacting liquid on the right.)... Figure 1. Band bending in n- and /7-doped semiconductors. (The vertical line represents the interface between the solid semiconductor on the left and a contacting liquid on the right.)...
The possibility that an electron-transfer path is involved in photo-sensitized oxygenation has been considered on several occasions. This is relevant in several fields of application, from the biomimetic oxygenation of indole and flavin derivatives [106] to pollutant control. With reference to latter, it has been suggested that SET occurs in heterogeneous photosensitized oxidation by solid semiconductors, in which the adsorbed substrate donates an electron to the photogenerated hole and... [Pg.1025]

We will carry on here the study of the degradation of the energy of these ions, electrons and photons. The properties of the irradiated solid, that exert negligible influence on the absorption of high energy radiation, must be taken into account in this part devoted to the absorption of low energy radiation. Let us recall that we are exclusively interested in this paper with nonmetallic solids (semiconductors and insulators) frequently, however, we will use the band theory of solids. [Pg.98]

This conversion is catalyzed by [Ru(Hedta)(H20)] (Hedta = trianion of eth-ylenediaminetetraacetic acid) at 30 °C and 10 Pa in the presence of a solid semiconductor mixture (CdS/Pt/RuO,). The photocatalytic production of ammonia is initiated by absorption of visible light (505 nm) by the CdS semiconductor (Fig. 13.12). Presumably, the incoming photons promote electrons from the valence band (VB) of CdS to its conducting band (CB), a process that leaves holes in the valence band. Water is photooxidized by RuOi, releasing electrons which are trapped by holes in the valence band of CdS. The electrons in the conducting band are transferred to the nithenium complex via platinum metal. Protons from the water oxidation are attracted to the reduced ruthenium complex, interact with coordinated N, in some unknown fashion, and are expelled as NH3. The cycle is complete when the coordination site left by NH3 becomes occupied once again by HjO. It remains to be seen whether proposed cycles such as this one measure up to their promise. [Pg.810]

In Fig. IB, the VLS process is illustrated. At reaction temperatures exceeding the eutectic. Si vapor dissolves in the Au seed to form a liquid alloy droplet. As more gaseous Si dissolves in the alloy, the droplet becomes supersaturated, and Si crystallizes on the droplet surface. The shape of the droplet interface and the surface tension difference between the liquid alloy and the solid semiconductor promote crystallization in one direction. In many cases, the liquid alloy droplet displaces off the surface and rides on the top of the vertically growing whisker—crystallization continues to occur at the liquid-solid interface as the metal seed is continuously fed with Si from the gas phase. [Pg.3192]

The rate F of a photocatalytic process on solid semiconductor particles is determined by the spectral density 7a (A) of the absorbed light power and the quantum yield, (A), of the reaction at a particular wavelength A ... [Pg.220]

As Koenig (18) notes, there is no reason to suppose that the interrelated assumptions of Kelvin, Bridgman, and Lorentz are correct, except as close approximations in most systems. From our experiments the approximations seem good. The deviations from these assumptions are worth pursuing since they offer the possibility of observing field-dependent surface effects. Our next series of experiments on liquid surfaces will require an improved control of gap geometry and of surface transverse waves. The search will also include solid semiconductors. [Pg.142]

Optics and Optical Instruments, B. K. Johnson. 2.00 Solid Semiconductors, A. K. Jonscher. 1.35 Foundations of Potential Theory, Oliver D. Kellogg. 3.00 The Fundamental Principles of Quantum Mechanics, Edwin C. Kemble. 3.50... [Pg.299]

While most molecular solid semiconductors are end-to-end symmetric, a recent publication focuses on thiophene oligomers with two different hydrocarbon end groups (Figure 5.3.3). This work also emphasizes the desirability of mesophase transitions in the processing to make films. Terthiophene with a hexynyl and a propyl end group and quaterthiophene with a propyl and hexynyl end group both exist in smectic phases at room temperature. Time-of-flight mobilities for these phases approach 0.1 cmWs [34]. [Pg.406]

A SSD operates on the same principle as a gas-ionization detector, but using a solid semiconductor instead of a filler gas. A SSD is a bloek of some semiconductor material (commonly Ge or Si) into which has been incorporated a minute quantity of a Group IIIA element sueh as gallium (Fig. 19.9). The doped block, having a lower... [Pg.577]

Most modern instruments rely on photoelectric transducers, detection devices that convert photons into an electrical signal. Photoelectric transducers have a surface that can absorb radiant energy. The absorbed energy either causes the emission of electrons, resulting in a photocurrent or moves electrons into the conduction band of a solid semiconductor, resulting in an increase in conductivity. There are several common forms of these detectors including barrier layer cells, photomultiplier tubes, and semiconductor detectors. [Pg.333]

FIGURE 18.8 The transistor and its inventors, (a) The first transistor, constructed in 1947 at Bell Laboratories. Electrical contact is made at a single point and the signal is amplified as it passes through a solid semiconductor modern junction transistors amplify in a similar manner, (b) Envelope and stamp commemorating 25 years of the transistor, with portraits of its inventors, Walter Brattain, William Shockley, and John Bardeen. [Pg.473]

The question is now what sort of order, if any, is conserved in a solid semiconductor when the long-range order is lost altogether, not only slightly disturbed. Such a solid is called amorphous. [Pg.58]


See other pages where Solid semiconductor is mentioned: [Pg.406]    [Pg.51]    [Pg.1]    [Pg.823]    [Pg.22]    [Pg.197]    [Pg.8]    [Pg.4356]    [Pg.823]    [Pg.3]    [Pg.294]    [Pg.537]    [Pg.565]    [Pg.279]    [Pg.4355]    [Pg.281]    [Pg.111]    [Pg.123]    [Pg.134]    [Pg.148]    [Pg.164]    [Pg.463]    [Pg.101]    [Pg.9]    [Pg.239]   
See also in sourсe #XX -- [ Pg.791 , Pg.792 , Pg.793 , Pg.794 , Pg.795 ]

See also in sourсe #XX -- [ Pg.141 ]

See also in sourсe #XX -- [ Pg.141 ]




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Amorphous solids semiconductors

Bonding in Solids Metals, Insulators, and Semiconductors

Energy gap semiconductor solid solutions

Network atomic solids semiconductor

Network solids semiconductors

Organic semiconductors solid-state structure

Selected Properties of Semiconductor Solid

Selected Properties of Semiconductor Solid Solutions

Semiconductor solid-liquid equilibrium

Semiconductors solid solutions

Semiconductors, amorphous solids germanium

Semiconductors, amorphous solids silicon

Solid-State and Semiconductor Lasers

Solid-state chemistry semiconductors

Solid-state semiconductors

Solid-state systems semiconductor

Solids semiconductor interfaces

Synthesis of InAs (and III-V semiconductors) by solid-state metathesis

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