Solid-state semiconductors

Mining. A solid-state semiconductor device has no physical contacts to make or break the current. There is thus no arc formation during switching of these... 

As mentioned in the introduction, before an adequate theory was developed, it was difficult to understand the experimentally determined pho-toinduced PMC signals, especially the minority carrier accumulation near the onset of photocurrents.The reason was that neither conventional solid-state semiconductor theory nor photoelectrochemical theory had taken such a phenomenon into account. But we have shown that it is real and microwave (photo)electrochemical experiments clearly confirm it. 

In EDXRF the secondary X-ray emitted by the excited atom is considered to be a particle (an X-ray photon) whose energy is characteristic of the atom whence it came. The major development which has facilitated this technique is the solid state semiconductor diode detector. An EDXRF system consists of a solid state device which provides an electronic output that is... 

Instead of glowbars, as used in MIR, tungsten halogen lamps are the sources of light. The detectors are solid-state semiconductors such as lead sulfide (PbS) or indium gallium arsenide (InGaAs). These are orders of magnitude quieter than typical MIR detectors and often more sensitive. 

The silicon used for making solid-state semiconductor devices such as transistors, computer chips, and solar cells must be ultrapure, with impurities at a level of less than 10 7% (1 ppb). For electronic applications, silicon is purified by converting it to SiCl4, a volatile liquid (bp 58°C) that can be separated from impurities by fractional distillation and then converted back to elemental silicon by reduction with hydrogen ... 

A solid-state - semiconductor device operated as a reference electrode. Typically a pH-sensitive -> CHEMFET is filled with pH-buffered gel on the pH-sensitive membrane attached to the gate of the FET keeping the operating conditions of the FET and thus the associated potential constant. 

Before the invention of lasers in 1960 (Maiman), radiation emitted by the mercury arc, especially at 435.8 and 404.7 nm, has been u.sed for exciting Raman spectra (Brandmiiller and Moser, 1962). Today, most types of lasers ( continuous wave (cw) and pulsed, gas, solid state, semiconductor, etc.), with emission lines from the UV to the NIR region, are used as radiation sources for the excitation of Raman spectra. Especially argon ion lasers with lines at 488 and 515 nm are presently employed. NIR Raman spectra are excited mainly with a neodymium doped yttrium-aluminum garnet laser (Nd YAG), emitting at 1064 nm. 

Most ISEs are based on purely physicochemical and non-catalytic recognition elements solid membranes with fixed ionic sites (e.g. the glass pH electrode), ion-exchange polymer membranes or plasticised hydrogel membranes incorporating ionophores [9], Silicon oxide or metal oxides act as the recognition element in pH-ISFETs, gas-sensitive FETs, solid-state electrolyte, solid-state semiconductor and many conductometric gas sensors. 

With the development of solid-state semiconductor devices (diodes, transistors), semiconductor/solution interfaces [24] became a subject of scientific interest. Since the 1960s, semiconductor electrochemistry and photo-electrochemistry has become established as an independent subdiscipline in electrochemical science. The basic principles and summaries of experimental results can be found in review papers and textbooks [25]. Here, we will introduce the subject by comparing simple electron transfer at a metal with that at a semiconductor electrode. 

The issue of how to characterize reduced Ti02 and the role of intercalation are still under much debate in the literature. In the dye-sensitized electrode field, the term accumulation is used very loosely. Many authors use the term accumulation layer when they actually mean an increased concentration of trapped electrons. This language is unfortunate, as accumulation layers have well defined meanings in solid-state semiconductor devices. It is unclear what accumulated trapped electrons really means. 

Lasers for CDs and DVDs are based on emission from solid state semiconductor materials their operation is described in Chapter 22. 

A silicon solar cell is a solid state semiconductor device that produces DC (direct current) electricity when stimulated by photons. The three most readily available types of silicon solar cells are the single crystal cell, the poly crystal cell and the vapor deposition type, often called amorphous or thin film cell. 

The most important advantage of photoelectrochemical cells with semiconductor electrodes, as compared to, for example, solid-state semiconductor solar cells, is a relatively low sensitivity of their characteristics to the crystalline perfection of the semiconductor and the degree of its purification. Polycrystalline semiconductor electrodes in electrochemical solar cells exhibit both high absolute and high relative (as compared to single-crystal electrodes) conversion efficiency. This opens, at least in principle, the way of... 

The optical bleaching by stored electrons is the basis for the occurrence of strong optical nonlinearity observed in Q-particles [64]. The physical reason for this optical bleaching is still not discussed conclusively in literature. The most obvious explanation comes from a state filling model. The stored electrons occupy the lowest electronic levels in the conduction band and, consequently, the optical transition has to occur to higher electronic levels (i.e., at shorter wavelength). This effect is known in solid-state semiconductor physics as the Burstein shift [65]. Other theoretical models describe the optical bleaching as a consequence of the polarization of the exciton in the electric field of the stored electron, which is then... 

A brief overview of some of the advantages and disadvantages of ion implantation processes in the doping of solid state semiconductor materials is presented below. 

Variety of substrate material—although virtually any material can be implanted, one must choose a material for impurity doping in solid state semiconductors which can be electrically activated. 

Due to the development of solid-state semiconductor detectors great progress with regards to spectral resolution had been achieved in gamma-ray spectrometry. By the use of these detectors spectra with excellent resolution are obtained. 

ED-XRF instrumentation incorporating solid state semiconductor detectors offers different detection... 

Semiconductor detectors. When an X-ray falls on a solid-state semiconductor, it generates an electron (e ) and a hole (e+). Based on this phenomenon, semiconductor detectors have been developed and are now of prime importance in EDXRF and scanning electron microscopy. The total ionization caused by an X-ray photon striking the detector is proportional to the energy of the incident photon. A formerly common saniconductor detector for laboratory EDXRF systems was the lithium-drifted silicon diode, represented as Si(Li) and called a silly detector. A schematic diagram of a silicon lithium-drifted detector is shown in Figure 8.23. 

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