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Semiconductor physics

Treatment of solid-state systems and semiconductor electrodes requires a basic understanding of solid-state physics. A brief simplified review of the physics of semiconductors is presented here. For a more complete treatment, the reader is referred to other textbooks.  [Pg.211]

Remember 12.1 The development of impedance models for semiconductors is similar to that for electrolytic systems with the exception that the capacity associated with the diffuse region of charge is modeled explicitly. [Pg.211]


The present article reviews basic concepts of semiconductor physics and devices witli emphasis on current problems. Furtlier details can be found in tlie references. [Pg.2877]

Kharkovskoe shosse 48, 02160, Kiev, Ukraine jotas mail.kar.net -Institute of Organic Chemistry the National Academy of Sciences of Ukraine, Murmanskaya str. 5, 02094, Kiev, Ukraine E-mail vik bpci.kiev.ua institute of Semiconductor Physics the National Academy of Sciences of Ukraine, pr.Nauki, 03028, Kiev, Ukraine E-mail kazants isp.kiev.ua... [Pg.327]

The beginnings of the enormous field of solid-state physics were concisely set out in a fascinating series of recollections by some of the pioneers at a Royal Society Symposium (Mott 1980), with the participation of a number of professional historians of science, and in much greater detail in a large, impressive book by a number of historians (Hoddeson et al. 1992), dealing in depth with such histories as the roots of solid-state physics in the years before quantum mechanics, the quantum theory of metals and band theory, point defects and colour centres, magnetism, mechanical behaviour of solids, semiconductor physics and critical statistical theory. [Pg.45]

Despite the scientific progress and the demonstration of novel device concepts, there was considerable skepticism that semiconducting polymers would ever reach the levels of purity required for long-lifetime commercial devices. In the context of the last 50 years of semiconductor physics, conjugated polymers were often... [Pg.3]

Sze,. Semiconductor Physics and Technology, John Wiley Sons, New York (1985)... [Pg.364]

Besides these chemical effects, which are understood in terms of the established theories in semiconductor physics and chemical kinetics, new physico-chemical phenomena are observed in the case of extremely small particles. The metal or semiconductor behavior is gradually lost with decreasing size, the consequences being drastic changes in the optical properties of the materials and also in their photocatalytic effects. [Pg.114]

However, the principle idea in the studies of that time dealt with assessment of possible changes of inherent properties of a semiconductor caused by its interaction with gaseous phase. In other words, this question was directly linked with problems of quickly developing in that time semiconductor physics. The well known gas cycle of Bardeen-Brattain [81] provides a typical example of the situation of those days. This cycle deals with a opportunity to control the potential of the surface of a semiconductor by adsorption means. [Pg.25]

P.S. Kireev, Semiconductor Physics, Vys. Shkola Publ., Moscow, 1975... [Pg.97]

A.I. Anselm, Introduction into Semiconductor Physics, Nauka Publ., Moscow, 1978... [Pg.98]

Yu PY, Cardona M (2010) Fundamentals of semiconductors physics and materials properties. Springer, Heidelberg... [Pg.304]

Nicollian, E.H., and Brews, J.R., (1982). MOS (Metal Oxide Semiconductor) Physics and Technology. John Wiley, New York, NY p. 781. [Pg.47]

Clerjaud, B. (1986). Current Issues in Semiconductor Physics, ed. A.M. Stoneham, Adam Hilger, Bristol, p. 117. [Pg.522]

Apart from its role in interacting with existing defects and impurities, hydrogen has recently been shown to induce defects as well (Johnson et al., 1987). Extended defects (described as platelets ) in the near-surface region were observed after hydrogenation and correlated with the presence of large concentrations of H. Theoretical models will be discussed in Part VIII. Part IX, finally, will contain some conclusions and point out directions for future work. As is the case for so many other topics in semiconductor physics, silicon (Si) has been the material for which the majority of... [Pg.602]

The counterparts to electrons in semiconducting solids are holes, represented by the symbol h. Each hole will bear an effective positive charge, qe, of +1, which is represented by the superscript to emphasize that it is considered relative to the surrounding structure. The concentration of holes that are free to carry current through a crystal is often given the symbol p in semiconductor physics. [Pg.22]

For a background introduction to the doping of semiconductors, try the fun Website Britney Spears guide to semiconductor physics at http //britneyspears.acAasers.htm, which is actually quite good in parts. [Pg.547]

Binary compound semiconductors, physical properties of, 22 145, 146-147t, 149t, 150t... [Pg.99]

D. Neamen, Semiconductor Physics and Devices, 3 rd edn, McGraw-Hill, New York, 2002, Ch. 9. [Pg.382]

Yu, P. Y. and Cardona, M.., Fundamentals of Semiconductors. Physics andMaterials Properties, Springer-Verlag, Berlin (1999). [Pg.149]

The energy barrier of a depletion layer (the potential across a depletion layer I I) is called the Schottky barrier in semiconductor physics. Assuming that all the impurity donors or acceptors are ionized to form a fixed space charge in the depletion layer, we obtain the following approximate equation, Eqn. 5—75, for the thickness of depletion layer, dx, [Memming, 1983] ... [Pg.181]

Electrochemistry at Electrodes is concerned with the structure of electrical double layers and the characteristic of charge transfer reactions across the electrode/electrolyte interface. The purpose of this text is to integrate modem electrochemistry with semiconductor physics this approach provides a quantitative basis for understanding electrochemistiy at metal and semiconductor electrodes. [Pg.406]

W. Paul, High Pressure in Semiconductor Physics A Historical Overview N. E. Christensen, Electronic Structure Calculations for Semiconductors under Pressure R. J. Neimes and M. I. McMahon, Structural Transitions in the Group IV, III-V and II-VI Semiconductors Under Pressure... [Pg.305]

Neamen DA (2002) Semiconductor Physics and devices basic principles 3rd Ed, Mc-Graw Hill professional. New York... [Pg.184]

The authors use optical spectroscopy of gate-induced charge carriers to show that, at low temperature and small lateral electric field, charges become localized onto individual molecules in shallow trap states, but that at moderate temperatures an electric field is able to detrap them, resulting in transport that is not temperature-activated. This work demonstrates that transport in such systems can be interpreted in terms of classical semiconductor physics and there is no need to invoke onedimensional Luttinger liquid physics [168]. [Pg.50]

Nelmes RJ, McMahon MI (1998) In High pressure in semiconductor physics I, semiconductors and semimetals, vol 54, pp 145-246... [Pg.101]

Putley, E. H. (1968). The Hall Effect and Semiconductor Physics. Dover, New York. [Pg.169]

The theoretical developments in the above areas were influenced, to a considerable extent, by concepts borrowed from semiconductor physics and the physics of surfaces. Other fields of photoelectrochemistry of semiconductors were affected to a greater degree by progress achieved in the study of metal electrodes. Here we mean photoemission of electrons from semiconductors into solutions and electroreflection at a semiconductor-electrolyte interface. [Pg.257]

Seeger, K. (1973). Semiconductor Physics, Springer-Verlag, Berlin and New York. [Pg.327]


See other pages where Semiconductor physics is mentioned: [Pg.2897]    [Pg.105]    [Pg.599]    [Pg.147]    [Pg.86]    [Pg.559]    [Pg.229]    [Pg.78]    [Pg.22]    [Pg.125]    [Pg.123]    [Pg.8]    [Pg.27]    [Pg.169]    [Pg.238]    [Pg.305]    [Pg.305]    [Pg.112]    [Pg.32]    [Pg.104]    [Pg.265]   


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