Solid-state systems semiconductor

It is evident from Eq. (94) that the maximum photovoltage depends critically on the exchange current Jo- In the case of pn-junctions, jo is determined by the injection and recombination (minority carrier device). Whereas in Schottky-type of cells jo can be derived from the thermionic emission model (majority carrier device). The analysis of solid state systems has shown that jo is always smaller for minority carrier devices [20,21]. Using semiconductor-liquid junctions, both types of cells can be realized. If in both processes, oxidation and reduction, minority carrier devices are involved, then jo is given by Eq. (37a), similarly as... 

Treatment of solid-state systems and semiconductor electrodes requires a basic understanding of solid-state physics. A brief simplified review of the physics of semiconductors is presented here. For a more complete treatment, the reader is referred to other textbooks. ... 

In a PEC cell one of the semiconductor-to-metal interfaces in replaced by the semiconductor/electrolyte interface. As a consequence, the price of the device is likely to be reduced since the electrolytic system is much less sensitive to the crystalline perfection and purity of a semiconductor than the solid-state system. Hence, inexpensive and readily available materials can be made use of (It is high price, not poor performance characteristics that narrows down the applicability of e g., silicon solar cells at present.) Moreover, passing of... 

Many of the CC theoretical predictions, such as control of atomic and molecular processes via N versus M photon transitions [137], have been tested and demonstrated experimentally [138-146]. CC methods have also proved to be valid in the context of solid-state systems. In particular, it was shown that excitation by N and M multiphoton processes, having opposite parities, leads to symmetry breaking and the generation of DC electric currents [147-151]. These predictions have been confirmed experimentally in a number of semiconductors [152-155]. Similar techniques were shown to lead to the control of phonon emission [156] or injection of spin currents [157]. 

In spite of impressive experimental demonstrations of basic quantum information effects in a number of different mesoscopic solid state systems, such as quantum dots in semiconductor microcavities, cold ions in traps, nuclear spin systems, Josephson junctions, etc., their concrete implementation is still at the proof-of-principle stage [1]. The development of materials that may host quantum coherent states with long coherence lifetimes is a critical research problem for the nearest future. There is a need for the fabrication of quantum bits (qubits) with coherence lifetimes at least three-four orders of magnitude longer than it takes to perform a bit flip. This would involve entangling operations, followed by the nearest neighbor interaction over short distances and quantum information transfer over longer distances. 

Sometime in the past decade, probably around 1982-1984, the collective imagination of electroanalytical chemists absorbed the connections among such diverse areas as solid-state chemistry, fabrication of solid-state devices, semiconductors, polymer morphology, surface and interfacial chemistry, membrane chemistry and technology, biochemistry, and catalytic mechanisms. Before the advent of electrodes modified with multilayers of polymers, these areas of endeavor were each distinct within the electroanalytical mind. Once charge transport could be observed in such a simultaneously simple and complex system as a redox polymer film, the relevance of charge transfer in biological systems, and at the surfaces of solids and membranes, became apparent. A 1984... 

We would like to note that the designing of tunable diode lasers is one of the most promising approaches used for the development of gas analyzers aimed for detection of a spedlic gas (Somesfalean et al. 2005). Gas analyzers based on tunable diode lasers are considerably simpler in comparison with conventional systems. A tunable laser is a laser whose wavelength of operation can be altered in a controlled manner. There are many types and categories of tunable lasers. They exist in the gas, liquid, and solid slates. Among the types of tunable lasers are excimer lasers, COj lasers, dye lasers (liquid and solid slate), transition-metal solid-state lasers, semiconductor crystal and diode lasers, and free-electron lasers (Duarte 1995). 

I. Tifrea, Nuclear Spin Dynamics in Semiconductor Nanostructures , in NATO Science Series, II Mathematics, Physics and Chemistry, eds. M. E. Flatte and I. Tifrea, Springer, 2007, vol. 244, Manipulating Quantum Coherence in Solid State Systems, p. 97. 

Solid-State DC Drives. The controlled-thyristor rectifier and separate-field DC motor is the solid-state motor drive in greatest use. The combination provides control over at least a 10 1 speed range, plus an additional two to three times by field weakening. Depending upon the power level, the rectifier is operated directly from the AC supply lines, or via a transformer. Typical speed regulation of 2% can be accomplished with a single control system. The horsepower and speed limitations are set by the DC motor, not by the semiconductor rectifiers. The DC motor and rectifier can be combined to any required power level. 

Interesting systems, mainly with respect to solid-state optoelectronics and chalco-genide glass sensors (due to ionic conductivity effects) are found among the Group IIIB (13) and IVB (14) chalcogenides, such as the p-type semiconductors MSe (M = Ga, In, Sn), SnS, and GeX (X = S, Se, Te). Some of the IIIB compounds. 

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