Metal-oxide-semiconductor technology

Main memories almost exclusively consist of semiconductors on a siUcon basis in complementary metal oxide semiconductor technology (CMOS). The most important types are the pure read only memory (ROM) and the write/read memory (RAM = random access memory), which is available as S-RAM (static RAM) or as D-RAM (dynamic RAM). 

Chatterjee A, Ali I, Joyner K, Mercer D, Kuehne J, Mason M, Esuivel A, Rogers D, O Brien S, Mei P, Murtaza S, Kwok SP, Taylor K, Nag S, Hames G, Hanratty M, Marchman H, Ashburn S, Chen I-C. Integration of unit processes in a shallow trench isolation module for a 0.25 pm complementary metal-oxide semiconductor technology. J Vac Sci Technol 1997 B15(6) 1936-1942. 

CMOS Complementary Metal Oxide Semiconductor technology, combi-... 

In CMOS (complementary metal-oxide-semiconductor) technology, the p-channel is fabricated by ion implantation. Using this technique, 5% control in the doping is possible and the threshold control is improved. 

E. H. Nicolhan and J. R. Brew [1982] MOS (Metal Oxide Semiconductor Technology) Physics and Technology, Wiley, New York. 

Roy PK, Kizilyalli IC (1998) Stacked high-gate dielectric for gigascale integration of metal-oxide-semiconductor technologies. Appl Phys Lett 72 2835. 

CMOS Complementary metal oxide semiconductor technology... 

Gate oxide dielectrics are a cmcial element in the down-scaling of n- and -channel metal-oxide semiconductor field-effect transistors (MOSEETs) in CMOS technology. Ultrathin dielectric films are required, and the 12.0-nm thick layers are expected to shrink to 6.0 nm by the year 2000 (2). Gate dielectrics have been made by growing thermal oxides, whereas development has turned to the use of oxide/nitride/oxide (ONO) sandwich stmctures, or to oxynitrides, SiO N. Oxynitrides are formed by growing thermal oxides in the presence of a nitrogen source such as ammonia or nitrous oxide, N2O. Oxidation and nitridation are also performed in rapid thermal processors (RTP), which reduce the temperature exposure of a substrate. 

Plasma etching is widely used in semiconductor device manufacturing to etch patterns in thin layers of polycrystaUine siUcon often used for metal oxide semiconductor (MOS) device gates and interconnects (see Plasma TECHNOLOGY). 

Fig. 1. Technological trends A, components per chip B, minimum feature length , metal oxide semiconductor (MOS) memory A, bipolar memory I MOS logic n, bipolar logic. The designations SSI, MSI, LSI, and VLSI stand for small-, medium-, large-, and very large-scale iategration, respectively.

For example, chloride and duoride ions, even in trace amounts (ppm), could cause the dissolution of aluminum metallization of complimentary metal oxide semiconductor (CMOS) devices. CMOS is likely to be the trend of VLSI technology and sodium chloride is a common contaminant. The protection of these devices from the effects of these mobile ions is an absolute requirement. The use of an ultrahigh purity encapsulant to encapsulate the passivated IC is the answer to some mobile ion contaminant problems. 

A wide variety of solid-state sensors based on hydrogen-specific palladium, metal oxide semiconductor (MOS), CB, electrochemical, and surface acoustic wave (SAW) technology are used in the industry for several years. Microelectromechanical systems (MEMS), and nanotechnology-based devices for the measurement of hydrogen are the recent developments. These developments are mainly driven by the demands of the fuel cell industry. Solid-state approaches are gaining rapid popularity within the industry due to their low cost, low maintenance, replacements, and flexibility of multiple installations with minimal labor. 

Schorner, R., et al., Enhanced Channel Mobility of 4H-SiC Metal-Oxide-Semiconductor Transistors Fabricated with Standard Polycrystalline Silicon Technology and Gate-Oxide Nitridation, Applied Physics Letters, Vol. 80, No. 22, June 3, 2002, p. 176. 

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