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Pattern etched

Figure 1. Example of a process flow sheet of a pattern-etch process for a wiring-board operation. Figure 1. Example of a process flow sheet of a pattern-etch process for a wiring-board operation.
Fig. 1. Flow near a rotating hemisphere electrode. (a) Dye movement at Re = 1300. (b, c) Spiral flow patterns etched on a copper hemisphere. Fig. 1. Flow near a rotating hemisphere electrode. (a) Dye movement at Re = 1300. (b, c) Spiral flow patterns etched on a copper hemisphere.
Schematic of the Si-nMEA fabrication process (a) sputter Au layer on double-side polished wafer (b) pattern Au layer with liftoff process (c) spincoat and cure a polyimide layer (d) perform the double-sided photolithography to pattern etch pits (e) etch Si in ICP-DRIE to form Au/Si electrode (f) dice the wafer into a single die (g) RIE etch the polyimide layer with a shadow mask to expose current collecting region (h) electroplate Pt black on Au layer (i) sandwich both electrodes with Nafion 112 in a hot-press bonder. (Reprinted from J. Yeom et al. Sensors Actuators B107 (2005) 882-891. With permission from Elsevier.)... Schematic of the Si-nMEA fabrication process (a) sputter Au layer on double-side polished wafer (b) pattern Au layer with liftoff process (c) spincoat and cure a polyimide layer (d) perform the double-sided photolithography to pattern etch pits (e) etch Si in ICP-DRIE to form Au/Si electrode (f) dice the wafer into a single die (g) RIE etch the polyimide layer with a shadow mask to expose current collecting region (h) electroplate Pt black on Au layer (i) sandwich both electrodes with Nafion 112 in a hot-press bonder. (Reprinted from J. Yeom et al. Sensors Actuators B107 (2005) 882-891. With permission from Elsevier.)...
The goal of any pattern-etching process is to transfer an exact replica of the mask features to the underlying film. However, this transfer establishes only... [Pg.430]

Figure 2.8 SEM micrograph of (a) quartz trench patterns etched with 85% C4H8-15% SF6 plasma and (b) etched capillaries pattern with 20 pm width, 50 pm depth, and aspect ratio of 2.5 [69]. Figure 2.8 SEM micrograph of (a) quartz trench patterns etched with 85% C4H8-15% SF6 plasma and (b) etched capillaries pattern with 20 pm width, 50 pm depth, and aspect ratio of 2.5 [69].
A direct solution to this problem would be a buffer layer between the pentacene channel layer and parylene passivation layer. Given that poly(vinyl alcohol) (PVA) has been used as a photo-patternable etch mask for pentacene, it can also work as this buffer layer. After PVA patterning of the pentacene TFT, 1 pm parylene was vapor deposited and patterned by standard photolithography and RIE dry etching. The TFT characteristics were measured before and after the parylene passivation. [Pg.380]

C. A. Deckert, Pattern etching ofCVD Si3N4/Si02 composites in HF/glycerol mixtures, J. Electrochem. Soc. 127, 2433, 1980. [Pg.470]

As an example of the latter point, several process and tool innovations have contributed to both the generation of smaller device patterns and the ability to maintain the integrity of those dimensions through the subsequent process steps. Thus, improved exposure tools (e.g., optical step and repeat, E-Beam) and masking materials (resist) allow considerably smaller pattern definitions than was previously possible. Once generated, these patterns can now be maintained with improved pattern etching techniques (reactive ion or plasma etching). [Pg.242]

Selective Deposition of Copper onto Laser-Patterned, Etched Teflon Substrates... [Pg.24]

Some applications do not require a pattern etch but require an overall etch to thin the material or reduce weight in racing cars or even to taper a tall structure such as a yacht mast. These techniques are often applied to aluminum and titanium alloys, stainless steels, and even superalloys such as Rene 41 (Bellows 1977 Dini 1984). [Pg.484]

Patterning Etching technique method Materials Typical area etched Resolution... [Pg.485]


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