Metal oxide semiconductor transistor

D. Landheer, G. Aers, W.R. Mckinnon, M.J. Deen, and J.C. Ranuarez, Model for the field effect from layers of biological macromolecules on the gates of metal-oxide-semiconductor transistors. J. Appl. Phys. 98, 044701-1-15 (2005). 

The rapid developments in the microelectronics industry over the last three decades have motivated extensive studies in thin-film semiconductor materials and their implementation in electronic and optoelectronic devices. Semiconductor devices are made by depositing thin single-crystal layers of semiconductor material on the surface of single-crystal substrates. For instance, a common method of manufacturing an MOS (metal-oxide semiconductor) transistor involves the steps of forming a silicon nitride film on a central portion of a P-type silicon substrate. When the film and substrate lattice parameters differ by more than a trivial amount (1 to 2%), the mismatch can be accommodated by elastic strain in the layer as it grows. This is the basis of strained layer heteroepitaxy. 

Schorner, R., et al., Enhanced Channel Mobility of 4H-SiC Metal-Oxide-Semiconductor Transistors Fabricated with Standard Polycrystalline Silicon Technology and Gate-Oxide Nitridation, Applied Physics Letters, Vol. 80, No. 22, June 3, 2002, p. 176. 

Standard metal-oxide-semiconductor transistors which have ideal structure for dielectric breakdown studies were employed in our experiments (Fig. 1). 

Khanna, V.K. (2004) Emerging Trends in Ultra-miniaturized CMOS (Complementary Metal-Oxide-Semiconductor) Transistors, Single-Electron and Molecular-Scale Devices ... 

A bipolar transistor may be used as a switch (either fully on with maximum current, or fully off with no current) and as an amplifier (always partly on). Bipolar transistors are the quickest devices. However the current flow through the base creates heat. This disadvantage makes bipolar transistors less popular than other devices such as metal oxide semiconductor transistor. 

Different types of SiC Field Effect Transistors, Metal Oxide Semiconductor Transistors (MOSFETs), Metal Semiconductor Field Effect Transistors (MESFETs), and Junction Field Effect Transistors (JFETs) compete for future applications in high temperature and harsh environment electronics. This Datareview details these various types of FETs, the structures used and the performances obtained. Interesting recent developments and potential applications, such as FET integrated circuits, a hybrid operational amplifier and an inverter circuit are also outlined. 

Figure C2.16.9. Schematic cross-section and biasing of a metal-oxide-semiconductor transistor. A uniform...

Epitaxial Enhancement. Epitaxial enhancement is used to deposit a layer of ultrapure silicon on the surface of the wafer. This provides a layer with different properties from those of the underlying wafer material, an essential feature for the proper functioning of the MOS (metal-oxide-semiconductor) transistors that are used in modern chips. In this process, polished wafers are placed into a programmable oven and spun in an atmosphere of trichlo-rosilane gas. Decomposition of the trichlorosilane... 

Gate - An electrode that adjusts the flow of current in a metal oxide semiconductor transistor. 

Metal-oxide Semiconductor Transistor Switch Matrix Address.239... 

Figure 18. Metal-oxide semiconductor transistor switch matrix addressed liquid crystal display panel and its equivalent circuit.

Aoki, Y. and Kunitake, T. (2004) Solution based iabrication of high- r gate dielectrics for next-generation metal-oxide semiconductor transistors. Adv. Mater.,... 

Trenkler, T., P. De Wolf, W. Vandervorst, and L. Hellemans. 1998. Nanopotentiometry Local potential measurements in complementary metal-oxide-semiconductor transistors using atomic force microscopy. J. Vac. Sci. Technol, B 16 367-372. 

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