Metal-insulator-semiconductor structures

Dawar, A. L. Kumar, A. Kumar, P. Mathur, P C. 1984. Field-effect studies on p-type CuInTe2 metal-insulator-semiconductor structures. I. Appl. Phys. 

Phosphorus oxynitride, PON, is a useful starting product, as a phosphorus and nitrogen source, to prepare various nitridooxophos-phates, in particular phosphorus oxynitride glass compositions (211). Moreover, it shows as a material excellent chemical stability with potential applications in several domains. In microelectronics, for example, PON has been used to form by evaporation insulating films for the passivation of III-V InP substrates and the elaboration of MIS (metal-insulator-semiconductor) structures (190, 212-215). PON could have also valuable properties in flame retardancy (176,191,216). 

Polymers and Their Application in Photogalvanic Metal-Insulator- Semiconductor Structures. 

Design and fabrication of ISFET was described in Ref. [88] The interest in ISFET arises chiefly from their application as pH and ion sensors. A graphical procedure to find PZC from capacitance-voltage characteristics of electrolyte-insulator-semiconductor and metal-insulator-semiconductor structures was discussed [89]. Due to the choice of electrolyte (2 mol dm Na2S04) the PZC values reported in this study (2.5 for Si02, 2.8 for Ta20s and 3-3.4 for Si3N4) are not likely to be the pristine values due to specific adsorption of anions. 

Since the ISFET is based on the field-effect transistor, let us recall briefly how the latter operates (see, e.g.. Ref. 98). The field-effect transistor (Fig. 19a) represents the so-called MIS (metal-insulator-semiconductor) structure (hence the abbreviation MIS-FET), i.e., a semiconductor base, onto which an insulating layer and a metal electrode (gate) are deposited. The base usually is a p-type silicon plate and the insulator, a Si02 or Si3N4 layer. With a thickness of 100-200 nm, the resistance of this layer is of the order of 10 fl. Two regions are produced in the base by local... 

FIGURE 3.2.2 A metal-insulator-semiconductor structure in accumulation mode. 

K. E. Ziemelis, A. T. Hussain, D. D. C. Bradley, R. H. Friend, J. Ruehe, G. Wegner, Optical spectroscopy of field-induced charge in poly(3-hexylthienylene) metal-insulator-semiconductor structures evidence for polarons, Physical Review Letters 1991, 66, 2231. 

Pilippini D, Lundstrom I (2003) Chemical images generated by large area homogeneous illumination of metal-insulator-semiconductor structures. Appl Phys Lett 82 3791-3793 Pilippini D, Andersson T, Svensson S, Lundstrom I (2003) Microplate based biosensing with a computer screen aided technique. Biosens Bioelectron 19 35-41... 

Chim, H., W. K, T. H. Ng, B. H. Koh, W. K Choi, J. X Zheng, C. H. Tung, A. Y. Du (2003) Interfacial and bulk properties of zirconium dioxide as a gate dielectric in metal-insulator-semiconductor structures and current transport mechanism. Journal of Applied Physics, 93,4788-4793. 

Interest to metal-insulator-semiconductor structures (MIS-structures) based on A3B5 compounds continuously grows owing to the high mobility of their charge carriers. However, despite the long research history, the problem of thermodynamically stable and dielectrically hard oxide formation with a low electronic states density at the interface in such semiconductors and InAs, in particular, has yet to be solved. 

Kan, K. K., Roberts, G. G., Petty, M, C., Langmuir-Blodgett Film metal-insulator semiconductor structures on narrow-band gap semiconductors. Thin Solid Films, 99, No. 1-3, 291-296, 1983.. 

Although infrared spectroseopy provides valuable information on the cyclization process, there is a general lack of agreement over the degree of imidization actually achieved. In partieular, it was shown that the dielectric properties are more sensitive to the final cure temperature with a eontinuous decrease of the dielectric dissipation factor (tan 5) between 300 and 400 °C. However, it is not elear whether this phenomenon is due to completion of the imidization process or to enhanced chain packing. Curves of Fig. 9.20 illustrate the results obtained with capacitors made of metal—insulator—semiconductor structures in the range of 200—400 °C. It is obvious that tan S decreases with increasing cure temperature to reach a minimum when cure is achieved at 350-400 °C. 

The addition of an insulating layer between semiconductor and one of the metal layers of the diode structure discussed in section 5 gives the MIS (Metal Insulator Semiconductor) structure which is widely used in a range of silicon semiconductor... 

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