Laser vaporization deposition

MWCNT Chemical vapor deposition (CVD) Arc-discharge deposition Laser vaporization deposition Ion beam assisted deposition... 

Rhenium hexafluoride is used for the deposition of rhenium metal films for electronic, semiconductor, laser parts (6—8), and in chemical vapor deposition (CVD) processes which involve the reduction of ReF by hydrogen at elevated (550—750°C) temperatures and reduced (<101.3 kPa (1 atm)) pressures (9,10). 

Deposition of Thin Films. Laser photochemical deposition has been extensively studied, especially with respect to fabrication of microelectronic stmctures (see Integrated circuits). This procedure could be used in integrated circuit fabrication for the direct generation of patterns. Laser-aided chemical vapor deposition, which can be used to deposit layers of semiconductors, metals, and insulators, could define the circuit features. The deposits can have dimensions in the micrometer regime and they can be produced in specific patterns. Laser chemical vapor deposition can use either of two approaches. 

Epitaxial crystal growth methods such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) have advanced to the point that active regions of essentially arbitrary thicknesses can be prepared (see Thin films, film deposition techniques). Most semiconductors used for lasers are cubic crystals where the lattice constant, the dimension of the cube, is equal to two atomic plane distances. When the thickness of this layer is reduced to dimensions on the order of 0.01 )J.m, between 20 and 30 atomic plane distances, quantum mechanics is needed for an accurate description of the confined carrier energies (11). Such layers are called quantum wells and the lasers containing such layers in their active regions are known as quantum well lasers (12). 

Chemical Vapor Deposition. In chemical vapor deposition (CVD), often referred to as vapor transport, the desired constituent(s) to be deposited are ia the form of a compound existing as a vapor at an appropriate temperature. This vapor decomposes with or without a reducing or oxidizing agent at the substrate— vapor interface for film growth. CVD has been used successfully for preparing garnet and ortho ferrite films (24,25). Laser-assisted CVD is also practiced. 

Alternative Thin-Film Fabrication Approaches. Thin films of electronic ceramic materials have also been prepared by sputtering, electron beam evaporation, laser ablation, chemical beam deposition, and chemical vapor deposition (CVD). In the sputtering process, targets may be metal... 

In the absence of an electric field, the dome-closed conformation must be the most stable tip structure, even when spot-welds are considered, since only the perfectly dome-closed tip has no dangling bonds (i.e., it is a true hemifullerene). At the 3000°C temperature of the arc, the rate of tip annealing should be so fast that it is sure to find its most stable structure (i.e., to close as a dome). Clear evidence of this facile closure is the fact that virtually all nanotubes found in the arc deposit are dome-closed. (Even stronger evidence is the observation of only dome-closed nanotubes made at 1200°C by the oven laser vaporization method.) Such considerations constituted the original motivation for the electric field hypothesis. 

Bauerle, D., Laser Induced Chemical Vapor Deposition, mLaser Processing and Diagnostics, (D. Bauerle, ed.), Springer-Verlag, New York (1984)... 

Baum, T. H., Laser Chemical Vapor Deposition ofGold. The Effect ofOrganometallic Structure, / Electrochem. Soc., 134(10) 2616-2619 (Oct. 1987)... 

England, K. M., and Mazunder, J., Kinetics and Microstructure of Laser Chemical Vapor Deposition of Titanium Nitride, SPIEProc., 2703 552-562 (Feb. 1996)... 

Carver, G. E., and Seraphin, B., Chemical Vapor Deposition Molybdenum Thin Films for High-Power Laser Mirrors, mLaser Induced Damage in Optical Materials, Publ. of National Bureau of Standards (Oct 1979)... 

DEC coating was first prepared by Aisenberg and Chabot using ion beam deposition in 1971 [2]. At present, PVD, such as ion beam deposition, sputtering deposition, cathodic vacuum arc deposition, pulsed laser deposition, and CVD, like plasma enhanced chemical vapor deposition are the most popular methods to be selected to fabricate DEC coatings. 

Up to the present, a number of conventional film preparation methods like PVD, CVD, electro-chemical deposition, etc., have been reported to be used in synthesis of CNx films. Muhl et al. [57] reviewed the works performed worldwide, before the year 1998, on the methods and results of preparing carbon nitride hlms. They divided the preparation techniques into several sections including atmospheric-pressure chemical processes, ion-beam deposition, laser techniques, chemical vapor deposition, and reactive sputtering [57]. The methods used in succeeding research work basically did not... 

Baum, T.H. (1987) Laser chemical vapor deposition of gold. Journal of the Electrochemical Society, 134, 2616. 

The synthesis of MNCGs can be obtained by sol-gel, sputtering, chemical vapor-deposition techniques. Ion implantation of metal or semiconductor ions into glass has been explored since the last decade as a useful technique to produce nanocomposite materials in which nanometer sized metal or semiconductor particles are embedded in dielectric matrices [1,2,4,23-29]. Furthermore, ion implantation has been used as the first step of combined methodologies that involve other treatments such as thermal annealing in controlled atmosphere, laser, or ion irradiation [30-32]. 

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