Dual ion beam sputtering

Ishiwata N (1987) Magnetic and structural-properties of dual ion-beam sputtered pure iron films. IEEE Trans Magn MAG-23 2152-2154... 

Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition... 

There are two forms of ion-beam-assisted deposition (IBAD). The first is a dual-ion-beam system in which one source is used to sputter a target to provide a source of atoms for deposition (the same process we described in Section 28.10). Simultaneously a second ion beam is aimed at the substrate and bombards the depositing film. In the second configuration, shown in Figure 28.7, an ion source is combined with an evaporation source. 

A similar system has a dual ion-beam. A primary beam sputters carbon while the growing film is being simultaneously bombarded with argon ions generated from a second ion source.l l Another system is based on a microwave discharge generated by electron cyclotron resonance (ECR).0 IPo] ji g principle of ECR is described in Ch. 13, Sec. 3.3. 

PHI TRIFT IV ToF-SIMS (Physical Electronics, USA) employs three electrostatic analyzers in the ion path to filter the background and metastable secondary ions. Using liquid metal cluster ion guns (such as Aut ion beam for sputtering of sample surface) increased sensitivity compared to a Ga+ primary ion beam are obtained (www.phi.com). The application of dual primary ion guns is useful for an effective dual beam depth profiling on multi-layered samples. 

There are two concepts regarding sputter removal and analysis In the single-beam approach, only one ion beam is used for both purposes. This format achieves high sensitivity as all the sputtered material is analyzed but imposes some restrictions on the primary ion type, energy, and beam diameter. The dual-beam technique... 

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