Beams energy

If a surface, typically a metal surface, is irradiated with a probe beam of photons, electrons, or ions (usually positive ions), one generally finds that photons, electrons, and ions are produced in various combinations. A particular method consists of using a particular type of probe beam and detecting a particular type of produced species. The method becomes a spectroscopic one if the intensity or efficiency of the phenomenon is studied as a function of the energy of the produced species at constant probe beam energy, or vice versa. Quite a few combinations are possible, as is evident from the listing in Table VIII-1, and only a few are considered here. 

XES, Soft x-ray emission An x-ray or electron beam Energy levels and chemical... 

Instmmentation for tern is somewhat similar to that for sem however, because of the need to keep the sample surface as clean as possible throughout the analysis to avoid imaging surface contamination as opposed to the sample surface itself, ultrahigh vacuum conditions (ca 10 -10 Pa) are needed in the sample area of the microscope. Electron sources in tern are similar to those used in sem, although primary electron beam energies needed for effective tern are higher, typically on the order of ca 100 keV. 

Yes, by varying the range of electron penetration (between about 10 nm and several im), which depends on the electron-beam energy (1-40 keV). 

Since the excitation depth can be selected by varying the electron-beam energy, depth-resolved information can be obtained. 

Nonradiative surface recombination is a loss mechanism of great importance for some materials (e.g., GaAs). This effect, however, can be minimized by increasing the electron-beam energy in order to produce a greater electron penetration range. 

In summary, CL can provide contactless and nondestructive analysis of a wide range of electronic properties of a variety of luminescent materials. Spatial resolution of less than 1 pm in the CL-SEM mode and detection limits of impurity concentrations down to 10 at/cm can be attained. CL depth profiling can be performed by varying the range of electron penetration that depends on the electron-beam energy the excitation depth can be varied from about 10 nm to several pm for electron-beam energies ranging between about 1 keV and 40 keV. 

Applications of CL to the analysis of electron beam-sensitive materials and to depth-resolved analysis of metal-semiconductor interfaces by using low electron-beam energies (on the order of 1 keV) will be extended to other materials and structures. 

The critical parameter for X-ray generation is the overvoltage U = Eq/E, yA e.rt. Eq is the incident beam energy. The intensity of characteristic X rays is given by ... 

Equation (1) demonstrates that the analyst must choose a beam energy that exceeds the critical excitation energy for the species to be analyzed. In general, a value of f/> 2 is required to achieve adequate efficiency in the production of X rays. 

Figure 2 (a) Monte Carlo simulation of electron trajectories in copper beam energy... 

Figure 3 Depth distribution of generation of Cu Ka X rays for an incident beam energy of 20 kaV, and the effect of absorption.

The unknown and standards must be measured under identical conditions of beam energy and spectrometer parameters. The specimen s surface must be oriented to known angles relative to the electron beam and the detector. All meas-... 

The simplest diffraction measurement is the determination of the surface or overlayer unit mesh size and shape. This can be performed by inspection of the diffraction pattern at any energy of the incident beam (see Figure 4). The determination is simplest if the electron beam is incident normal to the surface, because the symmetry of the pattern is then preserved. The diffraction pattern determines only the size and shape of the unit mesh. The positions of atoms in the surface cannot be determined from visual inspection of the diffraction pattern, but must be obtained from an analysis of the intensities of the diffracted beams. Generally, the intensity in a diffracted beam is measured as a fimction of the incident-beam energy at several diffraction geometries. These intensity-versus-energy curves are then compared to model calculations. ... 

Surface atomic structure. The integrated intensity of several diffracted beams is measured as a fimction of electron beam energy for different angles of incidence. The measurements are fitted with a model calculation that includes multiple scattering. The atomic coordinates of the surfiice atoms are extracted. (See also the article on EXAFS.)... 

J. Ghijsen. Surf Sci. 126, 177, 1983. REELS spectra of pure Mg versus primary beam energy showing relative intensities of the bulk and surface plasmons. 

Because a FIXE spectrum represents the int al of all the X rays created along the particle s path, a single FIXE measurement does not provide any depth profile information. All attempts to obtain general depth profiles using FIXE have involved multiple measurements that varied either the beam energy or the angle between the beam and the target, and have compared the results to those calculated for assumed elemental distributions. Frofiles measured in a few special cases surest that the depth resolution by nondestructive FIXE is only about 100 nm and that the absolute concentration values can have errors of 10-50%. 

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