Etching sputter

Uses. The chemical inertness, thermal stability, low toxicity, and nonflammability of PFCs coupled with their unusual physical properties suggest many useflil applications. However, the high cost of raw materials and manufacture has limited commercial production to a few, small-volume products. Carbon tetrafluoride and hexafluoroethane are used for plasma, ion-beam, or sputter etching of semiconductor devices (17) (see loN implantation). Hexafluoroethane and octafluoropropane have some applications as dielectric gases, and perfluorocyclobutane is used in minor amounts as a dielectric fluid. Perfluoro-1,3-dimethyl cyclohexane is used as an inert, immersion coolant for electronic equipment, and perfluoro-2-methyldecatin is used for... 

The blanket deposition is then sputter etched through a resist to pattern the metallisation. Selective deposition of W, under development, would deposit metal only in desired areas, and would reduce process steps and costs. 

Fig. 12. Auger electron spectroscopy (AES) sputter-depth profile of CAA-treated titanium after various exposure.s in vacuum (a) as anodized, (b) 450°C for 1 h, and (c) 7(X)°C for 1 h. The sputter etch rate is 1.5 nm/min. The line indicates the original interface. The arrow denotes oxygen diffused into the substrate. Adapted from Ref. [51].

A wide variety of process-induced defects in Si are passivated by reaction with atomic hydrogen. Examples of process steps in which electrically active defects may be introduced include reactive ion etching (RIE), sputter etching, laser annealing, ion implantation, thermal quenching and any form of irradiation with photons or particles wih energies above the threshold value for atomic displacement. In this section we will discuss the interaction of atomic hydrogen with the various defects introduced by these procedures. 

An example of the ability of atomic hydrogen to passivate the electrically active damage created by Ar2+ ion beam (6 keV) bombardment of n-type (N = 1.5 x 1016 cm-3) Ge is shown in Fig. 8. In this case the Ge was sputter etched for 10 min. at 24°C or 100°C and the spectrum recorded using an evaporated Au Schottky contact. The damage created by the sputtering caused the rather broad peak of Fig. 8(i), which was unaffected by a 30 min. anneal at 200°C in molecular hydrogen. Heating in atomic... 

Fig. 8. Capacitance transient spectra recorded under the same conditions for Ar+ sputter etched n-type Ge. (a) substrate temperature 25°C during sputtering, (b) substrate temperature 100°C during sputtering and (c) after sputter etching and hydrogenation at 180 C for 20 min. (Pearton et al., 1983).

Fig. 9. Capacitance transient spectra for (a) sputter-etched p-type Si and (b) after hydrogenation of the sputter-damaged Si at 180°C for 20 min.

In ion milling systems (143-145) a confined plasma is used to generate ions. A set of grids used for confinement is biased so that an ion beam can be extracted from the source. This beam is then directed to the substrate surface, where sputter etching or ion milling takes place. 

Extensive (Sample on Target Electrode) Sputter Etching Reactive Sputter Etching Reactive Sputter Etching Reactive Ion Etching... 

Fig. 3.1. Plasma etching systems, a and b Barrel system with etch tunnel, c Planar system, d Planar system (reactive ion etching or reactive sputter etching mode), e Downstream system...

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