Silicon hydrogenated

The deposition of amoriDhous hydrogenated silicon (a-Si H) from a silane plasma doped witli diborane (B2 Hg) or phosphine (PH ) to produce p-type or n-type silicon is important in tlie semiconductor industry. The plasma process produces films witli a much lower defect density in comparison witli deposition by sputtering or evaporation. 

Silicon is used in many fonns, from high-purity tliin films to bulk material, which may be crystalline, multi- or poly crystalline and amorjDhous (usually hydrogenated). Silicon is the material discussed tire most in tliis article. Substitutional B and P are tire most common (of many) shallow acceptors and donors, respectively. 

Examples of the unique insights obtained by solid state NMR applications to materials science include the Si/Al distribution in zeolites, the hydrogen microstructure in amorphous films of hydrogenated silicon, and the mechanism for the zeolite-catalyzed oligomerization of olefins. ... 

Rev. Lett. 56,1377,1986. Detection of hydrogen clustering in amorphous hydrogenated silicon by a special technique of dipolar spectroscopy, mul-dple-quantum NMR. 

Silicon, like carbon, is relatively inactive at ordinary temperatures. But, when heated, it reacts vigorously with the halogens (fluorine, chlorine, bromine, cmd iodine) to form halides and with certain metals to form silicides. It is unaffected by all acids except hydrofluoric. At red heat, silicon is attacked by water vapor or by oxygen, forming a surface layer of silicon dioxide. When silicon and carbon are combined at electric furnace temperatures of 2,000 to 2,600 °C (3,600 to 4700 °F), they form silicon carbide (Carborundum = SiC), which is an Importeint abrasive. When reacted with hydrogen, silicon forms a series of hydrides, the silanes. Silicon also forms a series of organic silicon compounds called silicones, when reacted with various organic compounds. 

The most commonly accepted model for the hydrogen-acceptor pairs locates H at the BC site (see Fig. 4). This model was originally proposed for the H—B complex on the basis of satisfied bonds to explain the increased resistivity (Pankove et al., 1983), SIMS profiles (Johnson, 1985), and a hydrogen local-mode frequency consistent with a perturbed hydrogen-silicon bond (Pankove et al., 1985 Johnson, 1985 Du et al., 1985). The acceptor deactivation by atomic hydrogen was subsequently observed for Al, Ga, and In acceptors in silicon (Pankove et al., 1984). Hydrogen local-mode vibrations were identified as well for the H—Al and H—Ga complexes (Stavola et al., 1987). The boron vibrational frequency for the H—B pair was first identified by Stutzmann (1987) and Herrero and Stutzmann (1988a). 

The catalytic cycle proposed for the cyclization-hydrosilylation with the cationic palladium catalyst is classified into the type D in Scheme 2. The reaction consists of an olefin insertion into palladium-silicon bond and the metathesis between palladium-carbon and hydrogen-silicon bond, regenerating the silylpalladium intermediate and releasing the product where migratory insertion of the pendant olefin into the alkylpalladium is involved before the metathesis (Scheme 26).83a... 

Theoretical investigations of AEV and AEC have indicated that the ratio AEV/AEC is greater than 1 [Zh2, Vo2, Ne2] and may be as high as 3 for the case of hydrogenated silicon clusters [Re3], In a similar calculation for thin silicon films, even-odd oscillations of A v according to the number of Si monolayers have been found [Zh2], For the latter case the ratio AEy/AEc showed values between 1 and 2. The results of a study [Wa5] including the decrease in the static dielectric constant with size are close to the experimentally [Bu2] observed values of about 2 for the ratio AEy/AEc, as shown in Fig. 7.16. In this work [Wa5], it is concluded that the electron-hole pair is confined by the physical dimension of the quantum dot, not by Coulomb attraction. 

The hydrogen-silicon distance is surprisingly short as the sum of the van der Waals radii is 3.1 A for these elements. 

The comparison between iron and manganese complexes, despite their electronic and geometrical resemblances, is difficult because of the highly specific hydrogen-silicon interactions in the case of the manganese complexes. The difference in stereochemistry can certainly be attributed to these interactions in the manganese complex. 

D. Hill, T. Jawhari, J.G. Cespedes, J.A. Garcia and E. Bertran, In-situ monitoring of laser annealing by micro-Raman spectroscopy for hydrogenated silicon nanoparticles produced in radio frequency glow discharge, Phys. Status SolidiA, 203, 1296-1300 (2006). 

Guha S, Narsimhan KL, Pietruszko SM (1981). On light induced effect in amorphous hydrogenated silicon. J Appl Phys 52 859-860... 

The fabrication of active semiconductor devices from amorphous semiconductor films is a further application that offers considerable advantages. Thin-fihn transistors, based on amorphous films of hydrogenated silicon, are nnder intensive development. Other devices with monostable and bistable switching characteristics have also received considerable interest. Naturally enough, the performance of snch devices is intimately related to the transport properties of charge carriers in the materials employed. 

Bridged silylene complexes are the subject of a recent comprehensive review by Ogino and Tobita338. These complexes can be classified into three types A, B and C (Scheme 9). In type A complexes there is no metal-metal bonding, the silicon is essentially tetravalent, and the bonding is similar to that in mononuclear metal-silyl complexes. In type C complexes, the bonding is best described as /j2-coordination of the Si—H bond to the metal, or alternatively as a metal-hydrogen-silicon 3-center 2-electron bond. 

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