Silicon carbide Schottky diode hydrogen sensor

6 Silicon carbide Schottky diode hydrogen sensor 

36 Low bias forward l-V characteristics from SiC sensor in 10% Hj in Nj or pure Nj ambients at different temperatures (size of contact is 0.5 cm X 0.5 cm). 

37 Time response of SiC sensor upon changing from pure Nj to 10% Hj in Nj ambient at 150°C. Note the y-axis shows the forward bias required to maintain a current of 30 mA. 

In conclusion, Pt/4H-SiC diode rectifiers of the type used for high-power electronic applications are also shown to be effective in gas sensor Hj detection. The time response of the diodes is limited by the gas mass flow transport characteristics, with the intrinsic response due to changes in the interfacial OH-dipole layer being very rapid. 

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