Hydrogen on silicon

The addition reaction of allylsilane to acetaldehyde with BF3 as the Lewis acid has been modeled computationally.95 The lowest-energy TSs found, which are shown in Figure 9.2, were of the synclinal type, with dihedral angles near 60°. Although the structures are acyclic, there is an apparent electrostatic attraction between the fluorine and the silicon that imparts some cyclic character to the TS. Both anti and syn structures were of comparable energy for the model. However, steric effects that arise by replacement of hydrogen on silicon with methyl are likely to favor the anti TS. 

See Contact stress Hexagonal symmetry 132 Hohenberg-Kohn theorem 113 Hydrogen molecular ion 173 history 173 repulsive force 185 resonance interaction 177 van der Waals force 175 Hydrogen on silicon 336 Image force 56—59, 72, 93 concept 56 effect on tunneling 74 field emission, in 56 jellium model, in 93 observability by STM 72... 

See Scanning tunneling spectroscopy Superconductors 332—334 Surface Brillouin zone 92 hexagonal lattice 133 one-dimensional lattice 123, 128 square lattice 129 Surface chemistry 334—338 hydrogen on silicon 336 oxygen on silicon 334 Surface electronic structures 117 Surface energy 96 Surface potential 93 Surface resonance 91 Surface states 91, 98—107 concept 98... 

Knowledge of the adsorption of hydrogen on silicon and germanium surfaces is important in order to obtain information on interfacial phenomenon of semiconductors. The adsorption of hydrogen on Si (111) surfaces is one of the best understood systems, although the exact nature of the clean surfaces is not well understood. 

The adsorption of atomic hydrogen on silicon is probably the simplest gas—semiconductor system and could provide the basis for a realistic attempt to relate theory and experiment in chemisorption on semiconductors. Early work by Law and Francois [196] and Law [197] established that atomic hydrogen is adsorbed to monolayer coverage, with an... 

Chabal Y J 1986 High-resolution infrared spectroscopy of adsorbates on semiconductor surfaces hydrogen on silicon(IOO) and germanium(IOO) Surf. Sci. 168 594-608... 

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