Hydrogen—Deep-Level-Defect Complexes in Silicon

Hydrogen—Deep-Level-Defect Complexes in Silicon 

The electrical activity of a defect is characterized in part by its electrical level position, which can be determined by capacitance transient methods. When the capacitance transient spectra are monitored before and after exposure to atomic hydrogen, it is found in many systems that these levels disappear. This phenomenon has been associated with the formation of electrically inactive hydrogen-impurity complexes as summarized by Pear-ton et al. (1987) and in Chapter 5 of this volume. 

Unfortunately, there has been little computational work on these interesting complexes hence, we will mostly consider complexes formed with shallow-level defects in the next section. There has, however, been a treatment of hydrogen-sulfur complexes in silicon by Yapsir et al. (1988) and a recent treatment of hydrogen-oxygen complexes by Gutsev et al. (1989), which we now describe. 

The electronic structure appropriate to a S—H complex was also reported and discussed. In both the one- and two-hydrogen cases, a number 

Model for the S-H2 pair in silicon (Reprinted with permission from the American Physical Society, Yapsir, A.S., Deak, P., Singh, R.K., Snyder, L.C., Corbett, J. W., and Lu, T.-M. (1988). Phys. Rev. B 38, 9936.) 

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IV. Hydrogen—Deep-Level-Defect Complexes in Silicon... 

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