Silicon, amorphous, hydrogen analysis

As a second example of the application of ion-beam analysis techniques to semiconductors, we take the calibration of IR absorption measurements of the hydrogen content of sputtered amorphous silicon and silicon nitride. In early measurements, the hydrogen content of glow-discharge a-Si H deduced from IR absorption measurements, using ablsinitio calculations of the absorption cross section of the Si—H IR absorption bands, was com-... 

We would expect here that the low carrier mobilities present in the disordered polyacetylene, estimated to be about 10 cm /Vsec, should put the Schottky barriers formed with it in the regime of the diffusion-limited current. We can reasonably take as a value for / the distance between hops estimated from the bipolaron hopping model, equation 11. This is estimated to be 3 nm, so that the inequality is only satisfied at values of Emax in excess of lO V/cm. We note that similar conclusions are made for the analysis of the behaviour of Schottky barriers formed with amorphous silicon/hydrogen alloys [56], though there are claims that the thermionic emission model is effective in this case, in spite of the low carrier mobilities [63]. 

---