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Sticking probability, hydrogen/silicon

A sticking model is used for the plasma-wall interaction [137]. In this model each neutral particle has a certain surface reaction coefficient, which specifies the probability that the neutral reacts at the surface when hitting it. In case of a surface reaction two events may occur. The first event is sticking, which in the case of a silicon-containing neutral leads to deposition. The second event is recombination, in which the radical recombines with a hydrogen atom at the wall and is reflected back into the discharge. [Pg.59]

A. Matsuda, K. Nomoto, Y. Takeuchi, A. Suzuki, Y. Yuuki, J. Perrin Temperature dependence of the sticking and loss probabilities of silyl radicals on hydrogenated amorphus silicon. Surf. Sci. 227, 50 (1990)... [Pg.283]


See other pages where Sticking probability, hydrogen/silicon is mentioned: [Pg.127]    [Pg.29]    [Pg.335]    [Pg.58]    [Pg.23]    [Pg.288]   


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