Applications of Hydrogen-Mediated Compensation in Silicon

In B-doped a-Si H, the B atoms can be inactive for two reasons 1) the B atom may be surrounded by only three Si atoms (trigonal binding), or 2) it may be in a tetrahedral site but with a neutralizing H atom 

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Lucovsky, G. and Pollard, W.B. (1984). Topics in Applied Physics Vol. 56, The Physics of Hydrogenated Amorphous Silicon II, ed. by Joannopoulos, J.D. and Lucosvsky, G. Springer, Berlin, p. 301. 

and Dickey, R.H. (1974). Spreading Resistance Symposium, edited by J.R. Ehrstein, U.S. National Bureau of Standards Special Publication No. 400-10 (U.S. GPO, Washington, D.C.). 

Aucouturier, A., Astier, M. and Chantre, A. (1988). Solid State Commun. 67, 855. 

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