Gates and Gate

Differential inverter gate AND gate OR gate amplifier... 

AND gate AND gate is a type of logic gate that requires two on (1) inputs to produce an on (1) output. 

On the basis of a breakdown that has appeared previously in the specialist literature [2], we have adopted a classification system for HR that relates to the method of plastic delivery - direct gating and gating via a distribution system (indirect gating). A view of the basic applications of HR in which this classification principle is applied is shown in Figures 1.3 and 1.4. 

Fig. 2. Three time gates set to measure backseattered pulse from cylinder interface echo (gate 1), echo from discontinuity (gate 2) and back echo (gate 3).

Nielsen, S.A. and Bj0rn0, L. (1997). Bistatic circular array imaging with gated ultrasonic signals. Acoustical Imaging, Vol. 23 (In press). 

The status bar displays information about the current status of the acquisition system the position of each of the four axes of the probe position monitor the maximum amplitude of the signal within the gate for both the coupling channel and the signal (flaw detection) channel and the current operating mode of the system, which may be record-... 

Gate Start and Width. Define the start position and width, in millimetres, of the gate used for defining the time interval in which the peak amplitude of the signal will be measured. 

The Evaluation system is a Windows based open system through DLL, Dynamic Link Library, which provides great flexibility in evaluation and presentation of data. It also makes it possible to customise evaluation and images for special applications The time gates can be set after testing and there is a 256 colour range for amplitude. The software include FFT -facilities which enables measurements on used probes for parameters such as center frequenzy and bandwidth. 

Toth A and Showalter K 1995 Logic gates in excitable media J. Chem. Rhys. 103 2058-66... 

Shaw S L, Salmon E D and Quatrano R S 1995 Digital photography for the light microscope results with a gated, video-rate CCD camera and NIFI-image software BioTechniques 19 946-55... 

Figure Bl.22.4. Differential IR absorption spectra from a metal-oxide silicon field-effect transistor (MOSFET) as a fiinction of gate voltage (or inversion layer density, n, which is the parameter reported in the figure). Clear peaks are seen in these spectra for the 0-1, 0-2 and 0-3 inter-electric-field subband transitions that develop for charge carriers when confined to a narrow (<100 A) region near the oxide-semiconductor interface. The inset shows a schematic representation of the attenuated total reflection (ATR) arrangement used in these experiments. These data provide an example of the use of ATR IR spectroscopy for the probing of electronic states in semiconductor surfaces [44]-...

The intensity autocorrelation measurement is comparable to all of the spectroscopic experunents discussed in the sections that follow because it exploits the use of a variably delayed, gating pulse in the measurement. In the autocorrelation experiment, the gating pulse is just a replica of the time-fixed pulse. In the spectroscopic experiments, the gating pulse is used to mterrogate the populations and coherences established by the time-fixed pulse. 

Trebino R and Kane D J 1993 Using phase retrieval to measure the intensity and phase of ultrafast pulses frequency-resolved optical gating J. Opt. Soc. Am. A 10 1101-11... 

Kane D J and Terbino R 1993 Characterization of arbitrary femtosecond pulses using frequency-resolved optical gating IEEE J. Quantum. Electron. 29 571-9... 

Kane D J and Trebino R 1993 Single-shot measurement of the intensity and phase of an arbitrary ultrashort pulse by using frequency-resolved optical gating Opt. Lett. 18 823-5... 

DeLong K W, Trebino R, Hunter J and White W E 1994 Frequency-resolved optical gating with the use of second-harmonic generation J. Opt. Soc. Am. B 11 2206-15... 

Hz repetition rate of the lasers and is usually sampled with a gated integrator, whose output is reeorded with a laboratory eomputer. Analogue, rather than digital, eleetronies is usually employed beeause of pile-up of the deteeted photon eounts in an experiment with reasonable produet intensities. 

Electron tunnelling tlirough monolayers of long-chain carboxylic acids is one aspect of interest since it was assumed tliat such films could be used as gate electrodes in field-effect transistors or even in devices depending on electron tunnelling [24, 26, 35, 36, 37 and 38]- It was found, however, tliat tlie whole subject depends critically on... 

Gates B C, Katzer J R and Sohuit GCA 1979 Chemistry of Catalytic Processes (New York MoGraw-Hill)... 

Szabo A, Shoup D, Northrup S H and McCammon J A 1982 Stochastically gated diffusion-influenced reactions J. Chem. Phys. 77 4484-93... 

The carriers in tire channel of an enhancement mode device exhibit unusually high mobility, particularly at low temperatures, a subject of considerable interest. The source-drain current is carried by electrons attracted to tire interface. The ionized dopant atoms, which act as fixed charges and limit tire carriers mobility, are left behind, away from tire interface. In a sense, tire source-drain current is carried by tire two-dimensional (2D) electron gas at tire Si-gate oxide interface. 

Figure C2.16.9. Schematic cross-section and biasing of a metai-oxide-semiconductor transistor. A unifonn conducting channei is induced between source (S) and drain (D) for > V. Voitage is appiied between the gate (G) and the source. Part (A) shows the channei for - V the transistor acts as a triode. The source-...

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