OFET Based on a Modified PPV and with Silanised Gate Oxide

2 OFET Based on a Modified PPV and with Silanised Gate Oxide 

A further peculiarity of these transistors has been observed and analysed in Ref. [45]. There is a striking difference between the TOC and the BOC transis- 

Sinee the hysteresis is predominantly determined only by the gate-voltage sweep, i.e. aeeumulation and depletion at the interface to the gate oxide, it should be possible to study the effeet mainly in the corresponding MIS capacitors. Results of such investigations will be discussed in the next section. 

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