AND gates

These two events are related to each other through an OR gate, ie, the top event can occur if either road debris or tire failure occurs. Another type of gate is the AND gate, where the output occurs if and only if both inputs occur. OR gates are much more common in fault trees than AND gates, ie, most failures are related in OR gate fashion. 

The resulting fault tree is shown in Figure 6, in which the top event is defined in terms of two intermediate events failure of the tank system or failure of the pumping system. Failure in either system would contribute to the overall system failure. The intermediate events are then further defined in terms of basic events. All of the basic events are related by AND gates because the overall system failure requires the failure of all of the individual components. Failures of the tanks and pumps are basic events because, without additional information, these events cannot be resolved any further. 

Step 8. The -type source and drain regions are created by As ion implantation. The As can penetrate the thin gate oxide, but not the thick field oxide or the polysihcon gate. The formation of the source and gate does not require a separate resist pattern, thus this technique is called self-aligning. 

Step 9. Si02 is blanket deposited over the substrate. The resist (mask 3) that has openings over the Si02 is deposited and patterned. The exposed Si02 is etched down to the source, drain, and gate layers, creating contact windows for metallisation. 

Fig. 9. Fabrication sequence for an oxide-isolated -weU CMOS process, where is boron and X is arsenic. See text, (a) Formation of blanket pod oxide and Si N layer resist patterning (mask 1) ion implantation of channel stoppers (chanstop) (steps 1—3). (b) Growth of isolation field oxide removal of resist, Si N, and pod oxide growth of thin (<200 nm) Si02 gate oxide layer (steps 4—6). (c) Deposition and patterning of polysihcon gate formation of -source and drain (steps 7,8). (d) Deposition of thick Si02 blanket layer etch to form contact windows down to source, drain, and gate (step 9). (e) Metallisation of contact windows with W blanket deposition of Al patterning of metal (steps 10,11). The deposition of intermetal dielectric or final...

C 0.15 C treatment easily machinable freezers valve stems, plugs, and gates... 

Fig. 3. Hardwired system having a PLC backup with lockout where the reset button must be pushed once the switch trips. CR = contact relay and LSHH = level switch high-high alarm "or" and "and" gates are designated as boxes.

Although the relationship between the channel charge and gate bias can be compHcated, it can be simply approximated as a capacitor stmcture. In this simplification the foUowiag equation holds, where q is the electron charge,... 

Pour typical weU patterns for contaminant plume containment are described in Ref. 16. The first is a pair of injection-production weUs. The second is a line of downgradient pumping weUs. The third is a pattern of injection-production weUs around the boundary of a plume. The fourth, the double-cell system, uses an inner ceU and outer recirculation ceU, with four ceUs along a line bisecting the plume in the direction of flow. Two other methods of plume containment are bio filters and a fuimel-and-gate system, which are described in the in bioremediation section. 

Ingots produced by secondary smelters and refiners and made to specifications are a good source of melting stock. Scrap, such as spmes and gates, and turnings from the foundry s own castings are very acceptable melting materials. 

The proper coordination and regulation of such factors as speed and pressure of the iajection plunger, temperatures of both the dies and the metal, and gating and venting influence the quaUty of die castings, especially with regard to soundness of stmcture and surface finish. 

Conditions (CD3)2CO, 25 °C, 400 MHz (H), 100 MHz ( C), 40.55 MHz ( N). (a) //NMR spectrum with expanded partial spectra and integrals (b, c) C NMR spectra, in each case showing proton broadband decoupled spectrum below and gated decoupled spectrum above, (b) ali-phatle resonances and (c) heteroaromatic resonances (d) N NMR speetrum, coupled, with expanded sections and integrals. 

Figure 3-23 Examples of transformer-coupled base and gate drives (a) single MOSFET drive circuit (b) dual MOSEET drive.

Injection moulding and extrusion may be carried out at temperatures in the range of 300-380°C. The polymer has a high melt viscosity and melt fracture occurs at a lower shear rate (about 10 s ) than with low-density polyethylene (about 10 s ) or nylon 66 (about 10 s ). Extruders should thus be designed to operate at low shear rates whilst large runners and gates are employed in injection moulds. 

Figure 7-15. Power number and Pumping number as functions of Reynolds number for a pitched-blade turbine and high-efficiency impeller. (Source Bakker, A., and Gates L. , Properly Choose Mechanical Agitators for Viscous Liquids," Chem. Eng. Prog., pp. 25-34, 1995.)...

Bakker, A. and Gates, L. E., Properly choose mechanical Agitators for viscous liquids, Chem. Eng. Prog., Dec. 1995. 

Solution Firstly it is necessary to determine the volume flow rate through the runners and gates. The total volume of the mnners, gates and cavities may be calculated as follows ... 

To get the pressure loss in the runners and gates. The flow rate in the long runner is (2/4, hence... 

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