Source, drain, and gate electrodes

Figure 15. (a) SEM image of a three-terminal device with source, drain and gate electrodes. The inset shows in magnification the gap in... 

Fig. 1. (a and b) Specimen geometries used in the field-effect experiments. S, D, and G represent the source, drain, and gate electrodes Q is a thin quartz dielectric, (c) Band diagram showing the formation of an electron accumulation layer near the surface between x = 0 and x — X. The electric field e from the positive gate electrode induces a charge —qin the a-Si H. The tail-state distribution TS between Ec and EA is likely to limit the band bending at the surface. 

PEDOT-PSS overlayer. The swollen photoresist lifts off along with the PEDOT-PSS overlayer, leaving behind patterns of PEDOT-PSS in the regions that did not originally contain any photoresist. PEDOT-PSS source, drain, and gate electrodes as small as 2 pm were fabricated in this fashion. 

Figure 14.17 All-organic thin-film transistor with PEDOT PSS source, drain and gate electrodes (schematic)...

The FET-based immunosensor device shown in Figure 4.6 is composed of a semiconductor channel and source, drain and gate electrodes, all of which are located on a substrate (commonly a Si wafer) with an insulating (dielectric) surface layer. The source and drain electrodes communicate with each other through the semiconductive channel, whde the gate electrode is used to modulate the channel conductance via an applied electrical potential. 

Thin-fihn transistors have been fabricated by depositing 50 nm of CdS onto SiOz-covered n Si and evaporating two A1 elechodes (source and drain) onto the CdS [45]. Similar devices were also made using CdS deposited on polyimide substrates with three (source, drain, and gate) evaporated metal electrodes and various sputtered insulator layers for the gate electrode. 

An OTFT comprises three electrodes (source, drain, and gate), a gate dielectric layer, and an organic or polymer semiconductor layer. In operation, an electric field is applied across the source-drain electrodes, and the transistor is turned on when a voltage (VG) is applied to the gate electrode, which induces a current flow (fD) from the source electrode to drain electrode. When VG = 0, the transistor is turned off, fD should in theory be 0, that is, no current is flowing. 

Both bipolar junction transistors (BJTs) and field-effect transistors (FETs) are charge-control devices [15]. The functions of the emitter, base, and collector electrodes of the BJT are replaced by the source, drain, and gate... 

A field-effect transistor (FET) is a three terminal device, equipped with three electrodes named source, drain and gate. The device architecture mostly used with organic semiconductors is the thin film FET (TFT), which is schematized in Fig. 13. 

Laminating this structure against a substrate that supports an organic semiconductor, gate dielectric (GR) and gate electrode (ITO) forms a transistor with the source/drain electrodes on top of the semiconductor. The transistor shown here... 

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