Conventional Wet Cleanings

The oxidizing and etching effects that help in particle removal may lead to a rougher surface on the substrate such as poly-Si [37,38]. Therefore, a balance must be maintained between the need for greater etching depth to remove 

TABLE 16.1 Typical Cleaning Solutions Used in the Semicondnctor Manufacturing Process. 

APM (SCI) NH4OH/H2O2/H2O Removal of organic contaminants and particles 

HPM (SC2) HCI/H2O2/H2O Removal of metallic ions, surface passivation by native oxide formation 

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