Cleaning plasma

Microwave induced plasma was generated by a Harrick Plasma Cleaner/ Sterilizer PDG-32G. The operating pressure was achieved by a vacuum pump (Vacuubrand RD 4). Hydrogen was applied as a permanent stream, regulated by the integrated inlet valve and adjusted to approx. 0.7 mbar (determined by a MKS PDR 2000 Dual Capacitance Manometer). The gas flow was not determined. 

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M. D. Smith, Effect of Various Gas Mixtures on Plasma Cleaned Ceramics, AUiedSignal Inc., Kansas City, Mo., Mar. 1979, p. BDX-613-2107. 

Minimal (Sample on Ground Plane) Plasma Cleaning Plasma Anodization (Oxygen plasma) Plasma Etching Plasma Ashing (Oxygen plasma)... 

Silicon wafers were oxygen plasma-cleaned in a parallel plate reactor at 400 W power, 300 mTorr pressure for 5 min. The gas flow was set to 100 seem total,... 

Table 1 shows the results for the 0%, 2%, and 5% added CF4 in the oxygen plasma cleaning of the silicon wafers, as well as the effect of APS application on the surface composition. 

Surface composition of the plasma-cleaned and APS-treated silicon surfaces... 

Figure 1. Wide scan spectra over the region 550-50 eV. Key a, oxygen plasma cleaned glass b, aluminum foil c, solvent cleaned rayon fibers d, solvent cleaned nylon fibers e, solvent cleaned wool fiber f, copolymer film (one monomer contains a chlorine substituted side chain) g, sulfonated 8% cross-linked styrene di-vinylbenzene copolymer beads h, copolymer containing diphosphine chelating...

Researches are carried out by equipment manufacturers, for example, remote plasma cleaning method was presented by Applied Materials Inc. at the 1997 Semicon West [43]. This method improved the usual decomposition ratio of NF3 ca 50% to more than 99%. Plasma is normally generated in a chamber, however,... 

Most of these discussions regarding fluorine contamination of aluminum surfaces have focused on the conversion of aluminum oxide to fluoride or oxyfluoride. Evidence for similar conversions was included, and in extreme cases conversion to aluminum bonding quite similar to that in AIF3 was found. However, the poor adhesion of the samples skipping the O2 plasma treatment is related not to the fluorine contamination as such, but rather to the carbonaceous nature of the adsorbed materials, which is subjected to the plasma polymerization of TMS. Oxygen plasma cleaning removes this carbonaceous component, while the surface fluorine concentration is enhanced. 

Figure 10.12 FIs and C Is spectra from both alloy panels and Si wafer pieces attached to them. Top figure panels are from samples exposed to the evacuation process and bottom panels are from samples exposed to the O2 plasma cleaning process. The third trace in each of the bottom panels is from an alloy panel that was O2 plasma cleaned in a new reactor with minimal fluorine contamination, indicating that the high binding energy C Is peak is not associated with fluorocarbon bonding.

Figure 26.10, and (d e) in Figure 26.11] until the force in the direction of the wet surface exceeds the adhesive tension of emersion, Te, at the polymer surface/water interface. After exceeding the adhesive tension, the three-phase contact line starts to move toward the prewetted surface, seen as (D E) in Figure 26.9 and (C D) in Figure 26.12. The adhesive tension in the receding process is usually less than that in the advancing process unless the surface was completely wetted by the first immersion (i.e., zero contact angle). When the complete wetting occurs on the first immersion, the first emersion line retraces the first immersion line, such is the case with O2 plasma-cleaned glass.

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