Chemical vapor deposition atmospheric pressure

Textured Tin Oxide Films Produced by Atmospheric Pressure Chemical Vapor Deposition from Tetramethyltin and Their Usefulness in Producing Light Trapping in Thin-Film Amorphous Silicon Solar Energy Mater., 18 263-281 (1989)... 

Atmospheric Pressure Chemical Vapor Deposition of Tungsten suicide, " J. Electrochem. Soc., 137(5) 1623-1626 (May 1990)... 

J. Hu and R.G. Gordon, Atmospheric pressure chemical vapor deposition of gallium doped zinc oxide thin films from diethyl zinc, water, and triethyl gallium, J. Appl. Phys., 72 5381-5392, 1992. 

Atmospheric plant discharge, 21 849-850 Atmospheric pollutants, 10 30 Atmospheric pressure, 24 285-287 Atmospheric pressure chemical vapor deposition (APCVD), 5 807, 811, 812 Atmospheric pressure flow pyrolysis, 21 134... 

Chemical vapor deposition (CVD) of thin solid films from gaseous reactants is reviewed. General process considerations such as film thickness, uniformity, and structure are discussed, along with chemical vapor deposition reactor systems. Fundamental issues related to nucleation, thermodynamics, gas-phase chemistry, and surface chemistry are reviewed. Transport phenomena in low-pressure and atmospheric-pressure chemical vapor deposition systems are described and compared with those in other chemically reacting systems. Finally, modeling approaches to the different types of chemical vapor deposition reactors are outlined and illustrated with examples. 

See, e.g.. Fix, R. M. Gordon, R. G. and Hoffman, D. M., Synthesis of thin films by atmospheric pressure chemical vapor deposition using amido and imido titanium(IV) compounds as precursors. Chem. Mater. 2 (1990) 235-241. 

Musher, J. N. and Gordon, R. G., Atmospheric pressure chemical vapor deposition of titanium nitride from tetrakis(diethylamido)titanium and ammonia. J. Electrochem. 

The preparation of tin phosphides has received attention due to their interesting mechanical, optical, and electrical properties catalyst applications. Atmospheric pressure chemical vapor deposition (APCVD) of tin phosphide thin films was achieved on glass substrates from the reaction of SnCU or SnBr4 with (R = Cy or Ph) at 500-600 °C. The films showed good uniformity and surface... 

Whenever possible, more rapid turnaround time, the absence of load locks, the reduced maintenance cost associated with the avoidance of vacuum systems, and the ease of incorporation into continuous processing systems, all combine to make atmospheric pressure chemical vapor deposition an attractive technique. In general, removal of reaction co-products is accomplished by utilization of a large excess of carrier gas (typically argon or nitrogen). Additionally, it may be noted that the thermal oxidation... 

APCVD atmospheric-pressure chemical vapor deposition... 

Woods, L. and Meyers, P. (2002) ITN Energy Systems Littleton, Colorado. Atmospheric Pressure Chemical Vapor Deposition and Jet Vapor Deposition of CdTe for High Efficiency Thin film PV Devices. Final technical report, 25 January 2000 to 15 August 2002, NREL/SR-520-32751. 

Blackman, C. S. and Parkin, 1. P. (2005) Atmospheric Pressure Chemical Vapor Deposition of Crystalline Monoclinic W03 and W03-x Thin Films from Reaction of WC16 with O-Containing Solvents and Their Photochromic and Electrochromic Properties. Chemistry of Materials 17,1583-90. 

For homoepitaxy on the porous Si layers, the usual Si epitaxy methods are applied. Most research has been reported on the usage of atmospheric pressure chemical vapor deposition (APCVD). But... 

Typical anion chromatograms of two different BPSG-films (A, B) and a standard (C) are illustrated in Fig. 9-88. Separation was carried out on lonPac AS4A with a carbonate/bicarbonate eluant mixture. Chromatogram A was obtained after dissolving an APCVD-film (APCVD Atmospheric Pressure Chemical Vapor Deposition) that exhibited good flow properties in 0.2% HF solution. Chromatogram B results from a PECVD-film (PECVD Plasma Enhanced Chemical Vapor... 

Blackman CS, Carmalt CJ, O Neill SA, Parkin IP, Apostolico L, Molloy KC (2004) Atmospheric-pressure chemical vapor deposition of group IVb metal phosphide thin films from tetrakisdimethylamidometal complexes and cyclohexylphosphine. Chem Mater 16 1120-1125... 

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