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Surfaces of semiconductors and

There has been an increasing number of studies of the UPD of main group elements, including S, Se, Te, I, Br, Cl, and As, on metal substrates, whereas studies of UPD processes on the surface of semiconductors and semimetal substrates are significantly less. Presently, most interesting in this connection is the combined use of photoexcitation of a semiconductor substrate and/or an immobilized precursor, and electrodeposition, as will be discussed in a subsequent paragraph. [Pg.173]

V.F. Kiselev and O.V. Krylov, Adsorption Processes on the Surface of Semiconductors and Dielectrics, Nauka Publ., Moscow, 1978... [Pg.94]

From the above-made review of literature, one may infer that the interaction of metastable atoms of rare gases with a surface of semiconductors and dielectrics is studied, but little. The study of the mechanism of transferring energy of electron-excited particles to a solid body during the processes under discussion is urgent. The method of sensor detection of rare gas metastable atoms makes it possible to obtain new information about the heterogeneous de-excitation of metastable atoms inasmuch as it combines high sensitivity with the possibility to conduct measurements under different conditions. [Pg.326]

Because of the adsorption equilibrium for H+ and OFT ions between the surface of semiconductors and an aqueous (aq) solution, the semiconductor surface attains the point of zero charge (PZC). The flat-band potential U[h of most semiconductors including all oxides and also other compounds such as n- and p-type GaAs, p-type GaP, and n- and p-type InP in an aqueous solution is determined solely by pH and shifts proportionately with pH with a slope of -59 mV/decade, that is, pH, for example,... [Pg.231]

Kiselev, V.F. Krylov, O.V. Adsorption Processes on Surfaces of Semiconductors and Dielectrics Nauka Moscow, 1978. (In Russian). [Pg.359]

In this section, the application of APS to the study of surface phenomena will be discussed. The section is divided into three parts. In the first part, the elucidation of electronic structure of the surfaces of semiconductors and metals by APS is described with suitable examples. The second part deals with the phenomenon of adsorption of gases on metallic surfaces leading to the formation of compounds. The third and final part examines the determination of local structure of semiconductor surfaces from the fine structure observed on the high energy side of an appearance potential edge. [Pg.206]

Electronics has, in fact, been a very fertile area for SEM application. The energy distribution of the SEs produced by a material in the SEM has been shown to shift linearly with the local potential of the surface. This phenomenon allows the SEM to be used in a noncontact way to measure voltages on the surfaces of semiconductor devices. This is accomplished using energy analysis of the SEs and by direedy measuring these energy shifts. The measurements can be made very rapidly so that circuit waveforms at panicular internal circuit nodes can be determined accurately. [Pg.81]

Electrochemical reactions at semiconductor electrodes have a number of special features relative to reactions at metal electrodes these arise from the electronic structure found in the bulk and at the surface of semiconductors. The electronic structure of metals is mainly a function only of their chemical nature. That of semiconductors is also a function of other factors acceptor- or donor-type impurities present in bulk, the character of surface states (which in turn is determined largely by surface pretreatment), the action of light, and so on. Therefore, the electronic structure of semiconductors having a particular chemical composition can vary widely. This is part of the explanation for the appreciable scatter of experimental data obtained by different workers. For reproducible results one must clearly define all factors that may influence the state of the semiconductor. [Pg.250]

Photoreactions on ZnO powder in aqueous suspension and in contact with gases have often been studied during the last few decades, and only a few aspects of this work are reviewed here. For example, nitrous oxide and methyl iodide were found to decompose when brought into contact at 20 °C with the illuminated surface of ZnO and nitrate, indigo carmine and p-nitrosodimethylaniline were found to be reduced in aqueous suspensions ZnO is of special interest as it is one of the standard electrode materials in conventional semiconductor electrochemistry and photo-electrochemistry Colloidal ZnO has not been available until recently. It... [Pg.160]

Pant and Levinger have measured the solvation dynamics of water at the surface of semiconductor nanoparticles [48,49]. In this work, nanoparticulate Zr02 was used as a model for the Ti02 used in dye-sensitized solar photochemical cells. Here, the solvation dynamics for H2O and D2O at the nanoparticle surface are as fast or faster than bulk water motion. This is interpreted as evidence for reduced hydrogen bonding at the particle interface. [Pg.414]

Arbitrary the book can be divided into two complementary parts. The first one describes the physical and chemical basics leading to description of the method of semiconductor sensors. The mechanisms of underlying processes are given. These processes involve interaction of gas with the surface of semiconductor adsorbent which brings about tiie change of electric and physics characteristics of the latter. Various models of absorption-induced response of electric and physics characteristics of semiconductor adsorbent are considered. Results of numerous physical and chemical experiments carried out by the authors of this book and by other scientists underlying the method of semiconductor sensors are scrupulously discussed. The possibility of qualitative measurements of ultra-small concentrations of molecules, atoms, radicals as well as excited particles in gases, liquids and on surfaces of solids (adsorbents and catalysts) is demonstrated. [Pg.1]

As it has been already mentioned in previous section the process of adsorption of gaseous particles on the surface of semiconductor adsorbent is one of the major and in several cases the most important stage controlling the adsorption-induced change in the value of surface charge resulting in alteration of numerous surface and volume electrophysical characteristics of adsorbent. [Pg.13]

In general, the peculiarities of the surface effects in thin semiconductors, for which application of semi-infinite geometry becomes incorrect were examined in numerous papers. As it has been shown in studies [101, 113, 121 - 123] the thickness of semiconductor adsorbent becomes one of important parameters in this case. Thus, in paper [121] the relationship was deduced for the change in conductivity and work function of a thin semiconductor with weakly ionized dopes when the surface charge was available. Paper [122] examined the effect of the charge on the temperature dependence of the work function and conductivity of substantially thin adsorbents. Papers [101, 123] focused on the dependence of the surface conductivity and value of the surface charge as functions of the thickness of semiconductor and value of the surface band bending caused by adsorption and application of external field. [Pg.41]

The use of catalysts and promotors of various reactions applied as a fine dispersion phase to the surface of semiconductor adsorbent became most popular in providing a required selectivity of sensors with respect to a given gas. As it has been established in experiments (see for instance [8] and the reference list therein), apart from obtaining required selectivity application of such additives results in increase of sensitivity of the sensor with respect to a given gas. However, as of today there is no clarity with regard to understanding the mechanism of effect of cata-l)rtic additives on the sensor effect nor in optimization of the choice of catalysts applied. [Pg.105]

The sensor detection of EEPs is methodically more complicated than the detection of atoms and radicals. With atoms and radicals being adsorbed on the surface of semiconductor oxide films, their electrical conductivity varies merely due to the adsorption in the charged form. If the case is that EEPs interact with an oxide surface, at least two mechanisms of sensor electrical conductivity changes can take place. One mechanism is associated with the effects of charged adsorption and the other is connected with the excitation energy transfer to the electron... [Pg.296]

The first step of surveying was represented by studying the nature of heterogeneous deactivation of singlet oxygen on a surface of oxidized and partially reduced zinc oxide [102] with the aid of semiconductor sensors. At room temperature and the pressure of O2 10 Torr, the value of y for de-exciting 02( A ) in ZnO is equal or approximately... [Pg.311]

Therefore these experiments showed a very interesting phenomenon, namely the emission of adsorbed silver atoms from the surface of a substrate after accomplishing the deposition process. In these experiments the semiconductor sensors were used in two ways sensor-substrate onto which the silver was deposited from, the tray, which made it possible to monitor the behaviour of silver atoms on the surface of adsorbent and sensor-detector of emitted silver atoms. [Pg.364]

Abstract A convenient method to synthesize metal nanoparticles with unique properties is highly desirable for many applications. The sonochemical reduction of metal ions has been found to be useful for synthesizing nanoparticles of desired size range. In addition, bimetallic alloys or particles with core-shell morphology can also be synthesized depending upon the experimental conditions used during the sonochemical preparation process. The photocatalytic efficiency of semiconductor particles can be improved by simultaneous reduction and loading of metal nanoparticles on the surface of semiconductor particles. The current review focuses on the recent developments in the sonochemical synthesis of monometallic and bimetallic metal nanoparticles and metal-loaded semiconductor nanoparticles. [Pg.151]

Zhu et al. [94] reported the synthesis of Sn02 semiconductor nanoparticles by ultrasonic irradiation of an aqueous solution of SnCLj and azodicarbonamide under ambient air. They found that the sonochemically synthesized Sn02 nanoparticles improved remarkably the performance of Li ion batteries such that there was about threefold increase (from 300 to 800 mAh/g) in the reversible capacity in the first lithiation to delithiation cycles. Similarly the irreversible capacity also increased by about 70% (from 800 to 1400 mA h/g). Wang et al. [95] reported the synthesis of positively charged tin porphyrin adsorbed onto the surface of silica and used as photochemically active templates to synthesise platinum and palladium shell and... [Pg.236]


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