Surface and semiconductors

This volume contains the papers presented at the Joint Symposium of the Corrosion and Electronics Divisions of The Electrochemical Society on the Surface Chemistry of Metals and Semiconductors held in Columbus, Ohio, October 19-21, 1959. The symposium was sponsored by the Office of Naval Research and the Electrochemical Society. It was conceived as a medium for an effective exchange of theory and technology between the fields of metal surfaces and semiconductor surfaces. Dr. J. W. Faust, jr., co-chairman of the Symposium shared with me the responsibility of its organization and planning. 

A diversity of polarizing elements exist for the purpose of rotating or selecting light of a specific electronic vector orientation. When the electronic direction vector of light incident to a surface is parallel to the electronic field vector of the surface, increased interaction of the incident light (absorption) occurs. This principle is important in characterizing the surface chemistry for optical components, thin films, metal surfaces, and semiconductor interfaces. The use of a quartz plate can act as a polarizer that will... 

These theoretical considerations predict that metal clusters growing on most clean metal surfaces and semiconductors would grow initially in two dimensions, and this is found experimentally. 

Surface reconstructions are common in both metal surfaces and semiconductor surfaces. The driving force behind the reconstruction is the need of the system to repair the damage done by the introduction of the surface, which severs the bonds of atoms on the exposed plane. 

As we have discussed earlier in the context of surfaces and interfaces, the breaking of the inversion synnnetry strongly alters the SFIG from a centrosynnnetric medium. Surfaces and interfaces are not the only means of breaking the inversion synnnetry of a centrosynnnetric material. Another important perturbation is diat induced by (static) electric fields. Such electric fields may be applied externally or may arise internally from a depletion layer at the interface of a semiconductor or from a double-charge layer at the interface of a liquid. 

Many of the fiindamental physical and chemical processes at surfaces and interfaces occur on extremely fast time scales. For example, atomic and molecular motions take place on time scales as short as 100 fs, while surface electronic states may have lifetimes as short as 10 fs. With the dramatic recent advances in laser tecluiology, however, such time scales have become increasingly accessible. Surface nonlinear optics provides an attractive approach to capture such events directly in the time domain. Some examples of application of the method include probing the dynamics of melting on the time scale of phonon vibrations [82], photoisomerization of molecules [88], molecular dynamics of adsorbates [89, 90], interfacial solvent dynamics [91], transient band-flattening in semiconductors [92] and laser-induced desorption [93]. A review article discussing such time-resolved studies in metals can be found in... 

McGilp J F 1995 Optical characterisation of semiconductor surfaces and interfaces Prog. Surf. Sc/. 49 1-106... 

This section will outline the simplest models for the spectra of both metal and semiconductor nanocrystals. The work described here has illustrated that, in order to achieve quantitative agreement between theory and experiment, a more detailed view of the molecular character of clusters must be incoriDorated. The nature and bonding of the surface, in particular, is often of crucial importance in modelling nanocrystal optical properties. Wlrile this section addresses the linear optical properties of nanocrystals, both nonlinear optical properties and the photophysics of these systems are also of great interest. The reader is referred to the many excellent review articles for more in-depth discussions of these and other aspects of nanocrystal optical properties [147, 148, 149, 150, 151, 152, 153 and 1541. 

Fig. 5. NMOS capacitance voltage characteristics where C is the oxide capacitance, A shows low frequency characteristics, and B shows high frequency characteristics. At low frequencies C approaches C for negative voltages (accumulation) and positive voltages (inversion). In the flat-band (FB) condition there is no voltage difference between the semiconductor s surface and bulk. The threshold voltage, Dp for channel formation is the point where the...

Organosulfur Adsorbates on Metal and Semiconductor Surfaces. Sulfur compounds (qv) and selenium compounds (qv) have a strong affinity for transition metal surfaces (206—211). The number of reported surface-active organosulfur compounds that form monolayers on gold includes di- -alkyl sulfide (212,213), di- -alkyl disulfides (108), thiophenols (214,215), mercaptopyridines (216), mercaptoanilines (217), thiophenes (217), cysteines (218,219), xanthates (220), thiocarbaminates (220), thiocarbamates (221), thioureas (222), mercaptoimidazoles (223—225), and alkaneselenoles (226) (Fig. 11). However, the most studied, and probably most understood, SAM is that of alkanethiolates on Au(lll) surfaces. 

Tungsten disulfide forms adherent, soft, continuous films on a variety of surfaces and exhibits good lubricating properties similar to molybdenum disulfide and graphite (51) (see also Lubrication and lubricants). Itis also reported to be a semiconductor (qv). 

Electronics has, in fact, been a very fertile area for SEM application. The energy distribution of the SEs produced by a material in the SEM has been shown to shift linearly with the local potential of the surface. This phenomenon allows the SEM to be used in a noncontact way to measure voltages on the surfaces of semiconductor devices. This is accomplished using energy analysis of the SEs and by direedy measuring these energy shifts. The measurements can be made very rapidly so that circuit waveforms at panicular internal circuit nodes can be determined accurately. 

Since then, STM has been established as an insttument fot foteftont research in surface physics. Atomic resolution work in ultrahigh vacuum includes studies of metals, semimetals and semiconductors. In particular, ultrahigh-vacuum STM has been used to elucidate the reconstructions that Si, as well as other semiconducting and metallic surfaces undergo when a submonolayer to a few monolayers of metals are adsorbed on the otherwise pristine surface. ... 

The degree of surface cleanliness or even ordering can be determined by REELS, especially from the intense VEELS signals. The relative intensity of the surface and bulk plasmon peaks is often more sensitive to surface contamination than AES, especially for elements like Al, which have intense plasmon peaks. Semiconductor surfaces often have surface states due to dangling bonds that are unique to each crystal orientation, which have been used in the case of Si and GaAs to follow in situ the formation of metal contacts and to resolve such issues as Fermi-level pinning and its role in Schottky barrier heights. 

Modulation Spectroscopy has proven to be an important characterization method for semiconductors and semiconductor microstructures. The rich spectra contain a wealth of information about relevant materials, surfaces and interfrces, as well as device characteristics. In general, the apparatus is relatively simple, compact (except EBER), inexpensive (except EBER), and easy to use. One of the main advantages of Modulation Spectroscopy is its ability to perform relevant measurements at room... 

Ellipsometry can be sensitive to layers of matter only one atom thick. For example, oxidation of freshly cleaved single-crystal graphite can be monitored from the first monolayer and up. The best thicknesses for the ellipsometric study of thin films are between about 1 nm and 1000 nm. Although the spectra become complicated, films thicker than even 1 pm can be studied. Flat planar materials are optimum, but surface and interfacial roughness can be quantitatively determined if the roughness scale is smaller than about 100 nm. Thus ellipsometry is ideal for the investigation of interfacial surfaces in optical coatings and semiconductor struc-... 

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