Shockley

Nix and Shockley [6] gave a detailed review of the status of order-disorder theory and experiment up to 1938, with emphasis on analytic improvements to the original Bragg-Williams theory, some of which will be... 

Shirakawa techmqi Shirlan Shirley Non-Lint AnalyZ Shi take mushroom Shock absorbers Shock absorption Shocking Shockley defects Shock treatment Shock tubes Shock waves Shoe components Shoe products Shoes... 

Hole injection into the / -region similarly results in a positive current flow from to, leading to the Shockley diode equation (eq. 12), with a... 

The idea of having two distinct quasi-Fermi levels or chemical potentials within the same volume of material, first emphasized by Shockley (1), has deeper implications than the somewhat similar concept of two distinct effective temperatures in the same block of material. The latter can occur, for example, when nuclear spins are weakly coupled to atomic motion (see Magnetic spin resonance). Quasi-Fermi level separations are often labeled as Im p Fermi s name spelled backwards. 

W. Shockley, Electrons andHo/es in Semiconductors, Van Nostrand, New York, 1950. 

Shockley, J. E. Calculus and Analytic Geometry. Saunders, Philadelphia... 

Shockley, W., Hollomon, J.H., Maurer, R. and Seitz, F. (editors) (1952) Imperfections in Nearly Perfect Crystals (Wiley, New York). 

The early understanding of the geometry and dynamics of dislocations, as well as a detailed discussion of the role of vacancies in diffusion, is to be found in one of the early classics on crystal defects, a hard-to-find book entitled Imperfections in Nearly Perfect Crystals, based on a symposium held in the USA in 1950 (Shockley et al. 1952). Since in 1950, experimental evidence of dislocations was as yet very sparse, more emphasis was placed on a close study of slip lines (W.T. Read, Jr.,... 

The Shockley involved in this symposium was ihe same William Shockley who had participated in the invention of the transistor in 1947. Soon after that momentous event, he became very frustrated at Bell Laboratories (and virtually broke with his coinventors, Walter Brattain and John Bardeen), as depicted in detail in a rivetting history of the transistor (Riordan and Hoddeson 1997). For some years, while still working at Bell Laboratories, he became closely involved with dislocation geometry, clearly as a means of escaping from his career frustrations, before eventually turning fulltime to transistor manufacture. 

Koehler, J.S, Seitz. F., Read Jr., W.T., Shockley, W. and Orowan, E. (eds.) (1954) Dislocations in Metals (The Institute of Metals Division, American Institute of Mining and Metallurgical Engineers, New York). 

Ohl demonstrated his results to Kelly early in 1940 Kelly felt that his instincts had been proved justified. Thereupon, Bell Labs had to focus single-mindedly on radar and on silicon rectifiers for this purpose. It was not till 1945 that basic research restarted. This was the year that the theorist John Bardeen was recruited, and he in due course became inseparable from Walter Brattain, an older man and a fine experimenter who had been with Bell since the late 1920s. William Shockley formed the third member of the triumvirate, though from an early stage he and Bardeen found themselves so mutually antagonistic that Bardeen was sometimes close to resignation. But tension can be productive as well as depressing. 

The immense importance of Si in transistor technology stems from the chance discovery of the effect in Ge at Bell Telephone Laboratories, New Jersey, in 1947, and the brilliant theoretical and practical development of the device by J. Bardeen, W. H. Brattain and W. Shockley for which they were awarded the 1956 Nobel Prize for Physics. A brief description of the physics and chemistry underlying transistor action in Si is given in the Panel (p. 332). 

William Shockley (seated), John Bardeen (standing, left), and Waller H. Braltain doing transistor research at Bell Telephone Laboratories (New York, 194S). (Corbis Corporation)... 

The study of electrons trapped in matter (commonly termed solid state ) led eventually to the invention of the transistor in 1947 by Walter Brattain, John Bardeen, and William Shockley at Bell Laboratories, and then to the integrated circuit hy Robert Noyce and Jack Kilby a decade later. Use of these devices dominated the second half of the twentieth century, most notably through computers, with a significant stininlus to development being given by military expenditures. 

The start of the solid-state electronic industry is generally recognized as 1947 when Bardeen, Brattain, and Shockley of Bell Telephone Laboratories demonstrated the transistor function with alloyed germanium. The first silicon transistor was introduced in 1954 by Texas Instruments and, in 1956, Bell Laboratories produced the first diffused junction obtained by doping. The first-solid state transistor diodes and resistors had a single electrical function and were (and still are) known as discrete devices. 

Bartelt-Hunt SL, Snow DD, Damon T, Shockley J, Hoagland K (2009) The occurrence of illicit and therapeutic pharmaceuticals in wastewater effluent and surface waters in Nebraska. Environ Pollut 157(3) 786-791... 

Figure 3, Area of clean gold (111) surface showing a surface Shockley partial dislocation (arrowed) - see 2. Atomic columns are black.

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