Read-Shockley model

As mentioned above, the slope of the log y l jn-potential dependence given in Fig. 7.35, has a slope of 92 mV/decade. According to the Shockley-Read recombination model (see Section 1.6) which is valid for a recombination in the bulk of a semiconductor, a slope of 60 mV/decade would be expected. In addition, recombination can occur within the space charge layer of a semiconductor which leads to a slope of 120 mV/ decade [52] (see also Section 2.3). With most p-n junctions which are minority carrier devices, a slope between 60 and 120 mV has been found. Therefore, the slope of 92 mV... 

W.T. Read and W. Shockley. Dislocations models of grain boundaries. In Imperfections in Nearly Perfect Crystals. John Wiley Sons, New York, 1952. 

Many (17), and Wang and Wallis (18), it is explicitly assumed that in adapting the Shockley-Read model (19) of recombination via traps to the surface the volume and surface portions of die conduction bands are in good thermodynamic equilibrium. Garrett (20) has shown, however, that in the case where the region of space charge is much wider than the mean free path of the carriers, the barrier may become the limiting factor. 

Surface recombination in most of these treatments invokes the Hall-Shockley-Read model [226, 227]. Defining the Gartner limiting expression (Eq. 24) as <1>g, we obtain [14]... 

Read, W.T. and Shockley, W. (1950) Dislocation models of crystal grain boundaries, Phys. Rev. 78(3), 275. A classic readable paper with great diagrams. 

We want to determine the relative magnitudes of the diffusion current and the space-charge layer generation-recombination (gr) current in a p-n junction for a model in which there are no Shockley-Read recombination centers in the... 

The capability of drift-diffusion models can be increased by introducing localized states into the band gap. Recently, several studies have introduced single trap levels [83] as well as distributions of localized states in order to describe the results of transient and steady state experiments on polymer fullerene solar cells [54, 84-89]. Most of these models use a Shockley-Read-Hall type occupation statistics for the localized states, which we will discuss in more detail in Sect. 2.3 and the Appendix 2 before discussing some of the implications of this model in the case studies in Sect. 4.1. 

The boundary conditions for the carrier transport equation in the magnetoconcentration detector are posed for the top and bottom surface, assuming that their surface recombination rates are described by the Shocldey-Read model, i.e., that S = 1/tno = 1/tpo- The second assumption often met in literature (e.g., [401]) is that the trap distribution function at the surface is always of Maxwell-Boltzmaim type (nondegenerate semiconductor). In that case Shockley-Read expression for recombination rate (1.70) becomes... 

Y.L. Tyan, T.R. Schimert, L.T. Claiborne, Analysis of excess carrier lifetime in p-type HgCdTe using a three-level shockley-read model. J. Vac. Sci. Technol. B 10(4), 1560-1568... 

Specific energy, the rate law for this type of recombination has been described by several workers and is referred to as the Shockley-Read-Hall (SRH) model. The expression for this recombination rate, Rsgjj (cm s" ), is... 

Trap-assisted recombination was first proposed by Shockley et al. and it is also known as Shockley-Read-Hall recombination. This recombination model was first used to study the charge recombination in inorganic semiconductors, and later it was introduced into the field of OSC. This type of recombination involves a trapped charge and a mobile charge with the... 

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