Shockley-Read recombination

By including terms to describe the rate of emission of electrons and holes from filled and empty surface states respectively, constraining the total number of surface states to Nt by N. + Ng = Nt and assuming that the states do not interact, the electron-hole recombination at. tile.surf ace has been analyzed -1— in analogy with Hall-Shockley-Read recombination. These methods are important in the study of semiconductor-... 

Prompt Luminescence. Before going on to discuss the mechanisms by which the stored energy can be released from the lattice we shall pause here to discuss what happens to the electronic excitation energy if it is not stored in the lattice by any of the mechanisms discussed above. In wide-band-gap insulators such as those discussed here direct band-to-band recombination of electrons with holes is not generally observed and indirect, Shockley-Read recombination via localized states in the band gap is the main cause of electron-hole recombination. The recombination process results in the emission of phonons or photons. Since we are interested in luminescence emission in this paper it is the emission of photons that we shall consider. The emission wavelength can be characteristic of the position (in terms of energy) of the localized state within the band gap, or via the process of energy transfer, it may... 

In the absence of bimolecular recombination, experimentally verified via the intensity dependence of the steady state photocurrent, and of defect-catalyzed recombination ("Shockley-Read recombination") ( ), K must con-... 

As mentioned above, the slope of the log y l jn-potential dependence given in Fig. 7.35, has a slope of 92 mV/decade. According to the Shockley-Read recombination model (see Section 1.6) which is valid for a recombination in the bulk of a semiconductor, a slope of 60 mV/decade would be expected. In addition, recombination can occur within the space charge layer of a semiconductor which leads to a slope of 120 mV/ decade [52] (see also Section 2.3). With most p-n junctions which are minority carrier devices, a slope between 60 and 120 mV has been found. Therefore, the slope of 92 mV... 

Consider Pbi, Sn,Te first and refer to Appendix C. For the detector of our example the Pbo gSno 2Te alloy is required to satisfy condition 1 see (4.104). We are interested in the detector performance theoretically possible using these alloys. Accordingly for conditions 2 and 3 we assume material of high enough perfection that Shockley-Read recombination is negligible and only direct radiative recombination occurs. The electron lifetime in the p-type region of Fig. 

An untrapped hole can recombine with a conduction band electron by any of three mechanisms direct radiative, interband Auger, and Shockley-Read recombination. 

We want to determine the relative magnitudes of the diffusion current and the space-charge layer generation-recombination (gr) current in a p-n junction for a model in which there are no Shockley-Read recombination centers in the... 

Appendix B gr Current of a p-n Junction when Shockley-Read Recombination is Negligible... 

Shockley-Read recombination rate is shown in Fig. 3.15. Its decrease is very modest, i.e., exclusion cannot be utilized for an efficient decrease of Shockley-Read processes. 

Fig. 3.15 Spatial distribution of Shockley-Read recombination rate along the length of the exclusion region of a Hgi-xCd Te n v detector with a gradient junction at 295 K for various values of bias voltage...

Surface recombination is analyzed using Hall-Shockley-Read recombination analysis. With the usual approximation, the recombination flux, Jr, is given by... 

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