Shockley-Read lifetime

According to the definition (1.17), Shockley-Read lifetimes of electrons and holes are... 

Since the stmctures and processes used for detector enhancement are interconnected, it often occurs that an approach introduced because of one effect also brings to an improvement of another one. A typical example can be found with methods for optical trapping that were introduced to improve the optical path through the detector (absorption coeflhcient-thickness product), to turn out that these methods not only improve radiative lifetime through photon recycling but even Auger and Shockley-Read lifetimes due to a decrease of overall dimensions of the detector. 

T o, Tpo Shockley-Read lifetime for completely empty (nO) or completely filled (pO) traps xr Response time... 

According to this equation, the lifetime of excited carriers decreases with increasing majority carrier density and consequently with doping. A similar result is obtained if the recombination process occurs via impurity centers (Shockley-Read equation [20]), which will not be shown here. The recombination rate also influences the stationary density of electrons and holes produced by light excitation. One obtains from Eqs. (6) and (7) ... 

Consider Pbi, Sn,Te first and refer to Appendix C. For the detector of our example the Pbo gSno 2Te alloy is required to satisfy condition 1 see (4.104). We are interested in the detector performance theoretically possible using these alloys. Accordingly for conditions 2 and 3 we assume material of high enough perfection that Shockley-Read recombination is negligible and only direct radiative recombination occurs. The electron lifetime in the p-type region of Fig. 

We consider a v-lype magnetoconcentralion detector. The crossed electric and magnetic field cause the depletion of a part of its volume. In an ideal case this would mean that the Auger g-r processes would be sufficiently suppressed to be negligible in comparison to radiative recombination. We further assume that material is sufficiently pure to allow to neglect Shockley-Read processes in bulk. Thus the generation term in the continuity equation reduces to the radiative term. Besides the bulk radiative lifetime we include in it a term of the form US (5 is surface recombination rate which is of SR nature). Then we assume that both of these terms have the identical dependence on the carrier concentration, so that the... 

Y.L. Tyan, T.R. Schimert, L.T. Claiborne, Analysis of excess carrier lifetime in p-type HgCdTe using a three-level shockley-read model. J. Vac. Sci. Technol. B 10(4), 1560-1568... 

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