Oxide-nitrides

Because x-rays are particularly penetrating, they are very usefiil in probing solids, but are not as well suited for the analysis of surfaces. X-ray diffraction (XRD) methods are nevertheless used routinely in the characterization of powders and of supported catalysts to extract infomration about the degree of crystallinity and the nature and crystallographic phases of oxides, nitrides and carbides [, ]. Particle size and dispersion data are often acquired with XRD as well. 

Gate oxide dielectrics are a cmcial element in the down-scaling of n- and -channel metal-oxide semiconductor field-effect transistors (MOSEETs) in CMOS technology. Ultrathin dielectric films are required, and the 12.0-nm thick layers are expected to shrink to 6.0 nm by the year 2000 (2). Gate dielectrics have been made by growing thermal oxides, whereas development has turned to the use of oxide/nitride/oxide (ONO) sandwich stmctures, or to oxynitrides, SiO N. Oxynitrides are formed by growing thermal oxides in the presence of a nitrogen source such as ammonia or nitrous oxide, N2O. Oxidation and nitridation are also performed in rapid thermal processors (RTP), which reduce the temperature exposure of a substrate. 

Many of the binary compounds of the lanthanides, such as oxides, nitrides, and carbides, can exist as non stoichiometric compounds. These form crystals where some of the anions ate missing from the sites the anions normally occupy. 

To obtain a metallurgical bond between two metals, the atoms of each metal must be brought sufficiently close so that their normal forces of interatomic attraction produce a bond. The surfaces of metals and alloys must not be covered with films of oxides, nitrides, or adsorbed gases. When such films are present, metal surfaces do not bond satisfactorily (see Metal surface treatments). 

Flaws in the anodic oxide film are usually the primary source of electronic conduction. These flaws are either stmctural or chemical in nature. The stmctural flaws include thermal crystalline oxide, nitrides, carbides, inclusion of foreign phases, and oxide recrystaUi2ed by an appHed electric field. The roughness of the tantalum surface affects the electronic conduction and should be classified as a stmctural flaw (58) the correlation between electronic conduction and roughness, however, was not observed (59). Chemical impurities arise from metals alloyed with the tantalum, inclusions in the oxide of material from the formation electrolyte, and impurities on the surface of the tantalum substrate that are incorporated in the oxide during formation. 

Properties. Uranium metal is a dense, bright silvery, ductile, and malleable metal. Uranium is highly electropositive, resembling magnesium, and tarnishes rapidly on exposure to air. Even a poHshed surface becomes coated with a dark-colored oxide layer in a short time upon exposure to air. At elevated temperatures, uranium metal reacts with most common metals and refractories. Finely divided uranium reacts, even at room temperature, with all components of the atmosphere except the noble gases. The silvery luster of freshly cleaned uranium metal is rapidly converted first to a golden yellow, and then to a black oxide—nitride film within three to four days. Powdered uranium is usually pyrophoric, an important safety consideration in the machining of uranium parts. The corrosion characteristics of uranium have been discussed in detail (28). 

Protection of niobium and its alloys from oxidation in air is accomplished by coating, e.g. with zinc deposited by holding in zinc vapour at 865°C or coating with a layer of chemically stable oxide, nitride or silicide. Silicide coatings applied by pack cementation, fused slurry or by electrolytic methods have been found to be one of the most effective means of preventing oxidation of the metal. 

Metal is then deposited into the opened vias (openings) in the oxide layer and over its surface. During the subsequent photolithography process, it is patterned to form the desired electrical interconnections. These two steps are repeated for each succeeding level to produce additional levels of interconnections. Finally, a protective overcoat of oxide/nitride is applied (passivation), and vias are opened so that the wires eonnectlng the IC chip to its carrier package can be bonded to output pads. 

Purification occurs in this process mainly due to three reasons (i) some of the impurities (such as oxygen, nitrogen, and carbon) present as oxide, nitride, and carbide in the feed... 

As we shall see later, borides (as well as oxides, nitrides, carbides, etc.) react with water to produce a hydrogen compound of the nonmetal. Thus, the reaction of magnesium boride with water might be expected to produce BH3, borane, but instead the product is B2ff6, diborane (m.p. -165.5 °C, b.p. -92.5 °C). This interesting covalent hydride has the structure... 

This structure is commonly adopted by oxides, nitrides halides, and sulfides MX, including the nonstoichiometric 3d transition-metal oxides TiO, VO, MnO, FeO, CoO, and NiO. 

With hydrogen, the alkali metals form the mono-hydrides MeH, having salt-like properties and a partially ionic, Me H, NaCl-type structure. They are colourless crystalline solids having a fairly negative AH of formation. The mono-hydrides react with water. They may be prepared from hydrogen and the metal (heated at 700-800°C for Li, 350-400°C for the others) or through the reaction of hydrogen with the alkali mono-oxide, nitride, etc. 

NHE OCP ONO OPS PCD PDS PL PLE PMMA PP PP PS PSG PSL PTFE PVC PVDF normal hydrogen electrode (= SHE) open circuit potential oxide-nitride-oxide dielectric oxidized porous silicon photoconductive decay photothermal displacement spectroscopy photoluminescence photoluminescence excitation spectroscopy polymethyl methacrylate passivation potential polypropylene porous silicon phosphosilicate glass porous silicon layer polytetrafluoroethylene polyvinyl chloride polyvinylidene fluoride... 

Schorner, R., et al., Enhanced Channel Mobility of 4H-SiC Metal-Oxide-Semiconductor Transistors Fabricated with Standard Polycrystalline Silicon Technology and Gate-Oxide Nitridation, Applied Physics Letters, Vol. 80, No. 22, June 3, 2002, p. 176. 

Table 3. Examples of oxide, nitride and fluoride structures in which the cation arrays are alloy structures...

The use of nitrides, along with sulfides and carbides, as catalysts for hydroprocessing has recently been extensively reviewed by Furimsky and will not be discussed in detail here. Subsequently, Al-Megren et have published a comparison of the activities of bulk CoMo carbide, oxide, nitride and sulfide catalysts for pyridine hydrodenitrogenation. Of these, the sulfide catalysts were reported to possess more stable activity, with the carbide being next, followed... 

Paramagnetism results from unpaired electrons. As a result, most compounds containing transition, rare-earth, and actinide elements, including oxides, nitrides, carbides, and borides, exhibit paramagnetism. Such ceramics are generally not of importance due to their paramagnetism alone, since they often exhibit other types of magnetism, as well. 

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