Nitride-oxide-semiconductor structures

Boron compounds with nonmetals, i.e., boron hydrides, carbides, nitrides, oxides, silicides, and arsenides, show simple atomic structures. For example, boron nitride (BN) can be found in layered hexagonal, rhombohedral, and turbostratic or denser cubic and wurtzite-like structures, as well as in the form of nanotubes and fullerenes. Boron compounds with metalloids also differ from borides by electronic properties being semiconductors or wide-gap insulators. 

This type of material is commonly used in the production of semiconductor devices.57 The silica layer is used as a starting layer for integrated circuit (IC) build-up. IC layer materials range from single crystals and doped polycrystalline silicon, silicon nitride, thermally-grown oxide to vapour deposited or sputtered metal or metal silicide layers. Structural adhesion of the various layers is obtained by the application of organosilanes, such as AEAPTS, APTS and GPTS. 

Alloys Borates Solid-state Chemistry Carbides Transition Metal Solid-state Chemistry Chalcogenides Solid-state Chemistry Diffraction Methods in Inorganic Chemistry Electronic Structure of Solids Fluorides Solid-state Chemistry Halides Solid-state Chemistry Intercalation Chemistry Ionic Conductors Magnetic Oxides Magnetism of Extended Arrays in Inorganic Solids Nitrides Transition Metal Solid-state Chemistry Noncrystalline Solids Oxide Catalysts in Solid-state Chemistry Oxides Solid-state Chemistry Quasicrystals Semiconductor Interfaces Solids Characterization by Powder Diffraction Solids Computer Modeling Superconductivity Surfaces. 

Many of the oxides, carbides, and nitrides with the NaCl structure tend to be nonstoichiometric. Titanium monoxide exists over the range Tio.ssO to TiO, while FeO never occurs it is always nonstoichiometric with a composition ranging from Feo.goO to Feo.geO. As a consequence of these vacancies, the transition metal exists in two valence states, causing the oxide to exhibit semiconductor properties (as for NiO). 

Silicon nitride (Si3N4) is a major industrial material which is produced extensively by CVD for electronic and structural applications. It is an excellent electrical insulator and diffusion barrier (to sodium and water vapor) and has replaced CVD oxides in many semiconductor devices.l l Silicon nitride coatings are produced by the reaction of silicon tetrachloride (SiCl4) with ammonia ... 

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