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Gallium oxide nitride

Literature Overview on Gallium Oxide Nitride Phases... [Pg.110]

The partial success of this precursor approach to produce the gallium oxide nitride phases has stimulated a search for further precursors that contain direct bonding of Ga to both N and O atoms within the precursor materials. [Pg.117]

Nakano and Jimbo investigated the interface electronic properties of thermally oxidized n-type GaN metal-oxide-semiconductor (MOS) capacitors [230]. The formation of an intermediate gallium oxide nitride layer vith a graded composition could provide the origin of a small capacitance transient observed experimentally. [Pg.123]

See other pages where Gallium oxide nitride is mentioned: [Pg.108]    [Pg.108]    [Pg.109]    [Pg.111]    [Pg.111]    [Pg.112]    [Pg.112]    [Pg.113]    [Pg.113]    [Pg.114]    [Pg.116]    [Pg.117]    [Pg.118]    [Pg.118]    [Pg.120]    [Pg.122]    [Pg.123]    [Pg.123]   
See also in sourсe #XX -- [ Pg.111 ]



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Gallium oxide

Overview on Gallium Oxide Nitride Phases

Oxide nitride

Precursor Approach for Gallium Oxide Nitride Phases

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