Metal-insulator-semiconductor devices

Salomonsson, A., Eriksson, M. and Dannetun, H., Hydrogen interaction with platinum and palladium metal-insulator-semiconductor devices, Journal of Applied Physics, 98,014505,2005. 

Fig. 11. The time dependence of the threshold voltage shift for a 20 V bias applied to an a-Si H based metal-insulator-semiconductor device for various temperatures (Jackson et al., 1989a).

Metal inert gas (MIG) welding, 27 369 Metal-insulator-semiconductor (MIS) capacitor, 29 140-143 Metal-insulator-semiconductor devices, 22 191, 192... 

A two colour infrared detector is described in US-A-5300777 which for each detector element comprises a heterojunction diode and a metal-insulator-semiconductor device. 

Fontaine, P. et al., Octadecyltrichlorosilane monolayers as ultrathin gate insulating films in metal insulator semiconductor devices, AppZ. Phys. Lett. 62, 2256-2258, 1993. Yoon, M.H. et al.. Low-voltage organic field-effect transistors and inverters enabled by ultrathin cross-linked polymers as gate dielectrics, J. Am. Chem. Soc. 127 (29), 10388-10395, 2005. 

E. Ebisawa, T. Kurokawa, and S. Nara, Polyacetylene metal-insulator-semiconductor devices, 7. Appl. Phys. 54 3255 (1983). 

Contacts are the elementary building blocks for all electronic devices. These include interfaces between semiconductors of different doping type (homojunctions) or of different composition (heterojunctions), and junctions between a metal and a semiconductor, which can be either rectifying (Schotlky junction) or ohmic. Because of their primary importance, the physics of semiconductor junctions is largely dealt with in numerous textbooks [11, 12]. We shall concentrate here on basic aspects of the metal-semiconductor (MS) and, above all, metal-insulator-semiconductor (MIS) junctions, which arc involved in the oiganic field-effect transistors. 

A Schottky diode is always operated under depletion conditions flat-band condition would involve giant currents. A Schottky diode, therefore, models the silicon electrolyte interface only accurately as long as the charge transfer is limited by the electrode. If the charge transfer becomes reaction-limited or diffusion-limited, the electrode may as well be under accumulation or inversion. The solid-state equivalent would now be a metal-insulator-semiconductor (MIS) structure. However, the I-V characteristic of a real silicon-electrolyte interface may exhibit features unlike any solid-state device, as... 

The success of CD CdS in photovoltaic cells has driven related research with potential applications in other semiconductor devices. Since the CD process seems to play a role in the favorable properties of the CdS windows by decreasing interface recombination, studies of its passivation properties on other interfaces and surfaces have been carried out, with considerable success. For example, when a very thin film (ca. 6 nm) was deposited between InP and SiOi, the resulting reduction of the interface state density led to improved electrical properties of metal-insulator-semiconductor capacitors and field effect transistors (FETs)... 

Metal-semiconductor-metal or metal-insulator-semiconductor (MIS) devices have been constructed using polymerized phthalocyanine derivatives with PF5 as the dopant (phosphorane structure)34. 

M.Y. Doghish and F.D. Ho, A comprehensive analytical model for metal-insulator semiconductor (MIS) devices, IEEE Trans. Electron Devices, 39(12) (1992) 2771-2780. 

Continued optimization of the deposition conditions led to efficiencies as high as 6.1% in p-i-n cells (1.19 cm2) by 1980 (Carlson, 1980a). An efficiency of 6.3% was reported later that year for a small (4.2-mm2) metal-insulator-semiconductor (MIS) device fabricated from a glow discharge in SiF4 and H2 (Madan et al., 1980) the film used in this MIS device was a silicon - hydrogen - fluorine alloy (a-Si H F). 

The attractiveness of silicon as a semiconductor material for ICs derives in part from the feet that this important material forms a naturally insulating surface oxide. Use is made of this fact, for example, in metal-oxide-semiconductor (MOS) field-effect transistors (FET), where the oxide serves as the gate insulator. No such naturally insulating oxide occurs with any of the compound semiconductors that offer improved performance over silicon in many device apphcations. Roberts et al. (38) demonstrated the feasibiUty of such metal-insulator-semiconductor (MIS) structures as FETs and chemical sensors shown schematically in Figure 1.23. These researchers... 

Figure 4.15. Top Cross section of a MISS diode. The device can be regarded as a reverse-biased metal-insulator-semiconductor diode in series with a for-ward-biased n-p Junction. It then exhibits two stable states separated by an unstable negative resistance region. Bottom Current-voltage characteristics for a GaAs-(j -TA MISS device. The LB film thickness is approximately 9 nm...

Due to the technological importance of metal-insulator-semiconductor (MIS) devices, understanding of the nature of their electrical characteristics such as current-voltage (1-V) and tunnel magnetoresistance (TMR) is of great interest. Unless intentionally fabricated, a silicon Schottky diode possesses a thin interfacial oxide layer between the metal and the semiconductor. Additionally, a density of interface states is always generated at the boundary between the semiconductor and insulator. 

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