Diodes Schottky

Schottky diodes Schottky contact Schottky effect Schottky barrier Schwabe, Kurt... 

Ainong the first TFIz mixers to be constructed were those based on room-temperature Schottky diodes [11]. Over the past decade, new mixers based on superconducting tunnel junctions have been developed that have effective noise levels only a few tunes the quantum limit of [12]. Flowever, certain conditions... 

Fig. 5. Structures and electric fields for (a) Read IMPATT diode and (b) Schottky cathode TED where represents ohmic and USchottky contact, and i...

Figure 3-29 Forward conduction voltage characteristic of the Schottky versus the ultrafast diode.

A small Schottky rectifier with a current rating of about 20 to 30 percent of the MOSFET current rating (/d) is placed in parallel with the MOSFET s intrinsic P-N diode. The parallel schottky diode is used to prevent the MOSFET s intrinsic P-N diode from conducting. If it were allowed to conduct, it would exhibit both a higher forward voltage drop and its reverse recovery characteristic. Both can degrade its efficiency of the supply by one to two percent. 

Schottky and P-N diodes measured at rated reverse voltage. 

MIM or SIM [82-84] diodes to the PPV/A1 interface provides a good qualitative understanding of the device operation in terms of Schottky diodes for high impurity densities (typically 2> 1017 cm-3) and rigid band diodes for low impurity densities (typically<1017 cm-3). Figure 15-14a and b schematically show the two models for the different impurity concentrations. However, these models do not allow a quantitative description of the open circuit voltage or the spectral resolved photocurrent spectrum. The transport properties of single-layer polymer diodes with asymmetric metal electrodes are well described by the double-carrier current flow equation (Eq. (15.4)) where the holes show a field dependent mobility and the electrons of the holes show a temperature-dependent trap distribution. 

In this section the electronic structure of metal/polymcr/metal devices is considered. This is the essential starting point to describe the operating characteristics of LEDs. The first section describes internal photoemission measurements of metal/ polymer Schottky energy barriers in device structures. The second section presents measurements of built-in potentials which occur in device structures employing metals with different Schottky energy barriers. The Schottky energy barriers and the diode built-in potential largely determine the electrical characteristics of polymer LEDs. 

Photodetectors operate by carrier transport across a semiconductor junction. A wide variety of these photodiodes are available, such as Schottky diodes, phototransistors, and avalanche photodetectors. Typical photodetector materials are gallium arsenic phosphide and gallium phosphide, which are produced by MOCVD or MBE. 

Chang, Y.-M. (2003) Coherent phonon spectroscopy of GaP Schottky diode. Appl. Phys. Lett., 82, 1781-1783. 

Recently a novel experimental approach using Schottky diodes with ultra-thin metal films (see Fig. 11) makes direct measurement of reaction-induced hot electrons and holes possible. See for example Refs. 64 and 65. The chemical reaction creates hot charge carriers which travel ballistically from the metal film towards the Schottky interface and are detected as a chemicurrent in the diode. By now, such currents have been observed during adsorption of atomic hydrogen and deuterium on Ag, Cu and Fe surfaces as well as chemisorption of atomic and molecular oxygen, of NO and N02 molecules and of certain hydrocarbons on Ag. Similar results have been found with metal-insulator-metal (MIM) devices, which also show chemi-currents for many exothermic surface reactions.64-68... 

Fig. 11. Schottky diode device used for measurement of chemicurrents. Highly exoergic surface reactions like adsorption of an atom to the surface produce excited electrons and holes. Some of these electrons are able to surmount the Schottky barrier and arrive at the semiconductor conduction band. This results in a detectable chemicurrent. (From Ref. 64.)...

The following arguments apply to a Synchronous Buck converter, too (with the Schottky diode placed across the lower Fet), but the effects can be much more severe in a Boost because of the typically higher voltages involved. 

Reverse recovery shoot-through current spike through Q1 occurs if during the preceding td (deadtime) interval the freewheeling current prefers to go through the body diode of Q2 instead of the paralleled Schottky... 

Figure 3-11 Maximizing Efficiency of a Synchronous Boost by Means of a Schottky Diode Connected with Low-inductance Traces...

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