Magnetoresistance tunneling

Parkin SSP, Kaiser C, Panchula A, Rice PM, Hughes B, Samant M, Yang SH (2004) Giant tunneling magnetoresistance at room temperature with MgO(lOO) tunneling barriers. Nat Mater 3 862-867... [Pg.300]

Santos TS, Lee JS, Migdal P, Lekshmi IC, Satpati B, Moodera JS (2007) Room temperature tunnel magnetoresistance and spin-polarized tunneling through an organic semiconductor barrier. Phys Rev Lett 98 016601... [Pg.301]

De Teresa JM, Barthlemey A, Fert A, Contour JP, LyonnetR, Montaigne P, Vaures A (1999) Inverse tunnel magnetoresistance in Co/StTiOa/Lao vSto aMnOa new idea on spin polarized tunneling. Phys Rev Lett 82 4288 291... [Pg.301]

Spin-dependent scattering, interlayer coupling, and tunnel magnetoresistance in trilayer structures... [Pg.3]

Figure 8. Minor-loop tunnel magnetoresistance (free layer reversal) for a 2 x 9 pm2 tunnel junction [37].

The signal measured by sensor can be used to quantify the amount of analyte present. The response to the sensor is determined by the in-plane component of the stray fields induced by the magnetized microspheres. Concentrations as low as 3.2 pg/ml have been detected [98], The introduction of tunneling magnetoresistance (TMR) sensing elements and smaller magnetic markers will increase the sensitivity of the method. [Pg.470]

In the last decade, study of double perovskites has accelerated with the discovery of tunneling magnetoresistive (TMR) effects in Sr2FeMo06.i56N. Both the magnetism and transport in these oxides is strongly influenced by the cationic nature and the order/disorder of the ions at the B-site. Ferromagnetism and half-metallic properties are often... [Pg.3443]

CURRENT-VOLTAGE CHARACTERISTICS AND TUNNEL MAGNETORESISTANCE OF CoFe/MgO/Si NANOSTRUCTURES... [Pg.307]

Due to the technological importance of metal-insulator-semiconductor (MIS) devices, understanding of the nature of their electrical characteristics such as current-voltage (1-V) and tunnel magnetoresistance (TMR) is of great interest. Unless intentionally fabricated, a silicon Schottky diode possesses a thin interfacial oxide layer between the metal and the semiconductor. Additionally, a density of interface states is always generated at the boundary between the semiconductor and insulator. [Pg.307]

MRE has a rate of magnetic resistance change (MR ratio) of 2-4%. On the other hand, GMR (giant magnetoresistance), TMR (tunnel magnetoresistance), and MI (magnetoimpedance) films are known as magnetic elements with an MR ratio of 10% or more. Tab. 7.10.3 provides a summary of their structures and characteristics [4—6]. [Pg.427]

AN EFFECT OF ELECTRON SCATTERING WITH SPIN CONSERVATION ON TUNNELING MAGNETORESISTANCE... [Pg.51]

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