Metal insulator-semiconductor memory devices

Chemical and physical processing techniques for ferroelectric thin films have undergone explosive advancement in the past few years (see Ref. 1, for example). The use of PZT (PbZri- cTi c03) family ferroelectrics in the nonvolatile and dynamic random access memory applications present potentially large markets [2]. Other thin-film devices based on a wide variety of ferroelectrics have also been explored. These include multilayer thin-film capacitors [3], piezoelectric or electroacoustic transducer and piezoelectric actuators [4-6], piezoelectric ultrasonic micromotors [7], high-frequency surface acoustic devices [8,9], pyroelectric intrared (IR) detectors [10-12], ferroelectric/photoconduc-tive displays [13], electrooptic waveguide devices or optical modulators [14], and ferroelectric gate and metal/insulator/semiconductor transistor (MIST) devices [15,16]. 

---