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Insulating oxide

In insulating oxides, ionic defects arise from the presence of impurities of different valence from the host cation. An aluminum ion impurity substituting in a magnesium oxide [1309-48-4] MgO, hostlattice creates Mg vacancies. [Pg.362]

The contact ends of printed circuit boards are copper. Alloys of nickel and iron are used as substrates in hermetic connectors in which glass (qv) is the dielectric material. Terminals are fabricated from brass or copper from nickel, for high temperature appHcations from aluminum, when aluminum conductors are used and from steel when high strength is required. Because steel has poor corrosion resistance, it is always plated using a protective metal, such as tin (see Tin and tin alloys). Other substrates can be unplated when high contact normal forces, usually more than 5 N, are available to mechanically dismpt insulating oxide films on the surfaces and thereby assure metaUic contact (see Corrosion and corrosion control). [Pg.30]

TBCs consist of two different materials applied to the hot side of the component a bond coat applied to the surface of the part, and an insulating oxide applied over the bond coat. Characteristics of TBCs are that the insulation is porous, and they have two layers. The first layer is a bond coat of NICrAlY, and the second is a top coat of YTTRIA stabilized Zirconia. [Pg.384]

Some insulating oxides become semiconducting by doping. This can be achieved either by inserting certain heteroatoms into the crystal lattice of the oxide, or more simply by its partial sub-stoichiometric reduction or oxidation, accompanied with a corresponding removal or addition of some oxygen anions from/into the crystal lattice. (Many metal oxides are, naturally, produced in these mixed-valence forms by common preparative techniques.) For instance, an oxide with partly reduced metal cations behaves as a n-doped semiconductor a typical example is Ti02. [Pg.322]

Since the insulator oxides such as MgO, CaO and AI2O3 are involved in this branch, it would be worth examining whether the mechanism of N2O decomposition on these insulator oxides is different from that on p-type oxides. [Pg.165]

At high temperatures the spinel MgAl204 can take in excess alumina to a composition of approximately 70 mol% A1203 (Fig. 4.5). (a) What are the possible formulas that fit the composition of this spinel Write the defect formation equation for the reaction if the excess A1 is (b) distributed over both magnesium and aluminum sites and (c) only over aluminum sites. Assume that there is no electronic compensation in the insulating oxide. [Pg.201]

The most important of these are perovskite structure solids with a formula A2+b4+o3 that can be typified by BaCeC>3 and BaZrCV The way in which defects play a part in H+ conductivity can be illustrated by reference to BaCeCV BaCeC>3 is an insulating oxide when prepared in air. This is converted to an oxygen-deficient phase by doping the Ce4+ sites with trivalent M3+ ions (Sections 8.2 and 8.6). The addition of the lower valence ions is balanced by a population of vacancies. A simple substitution reaction might be formulated ... [Pg.286]

Field effect transistors are miniature, solid-state, potentiometric transducers (Figure 4.22) which can be readily mass produced. This makes them ideal for use as components in inexpensive, disposable biosensors and various types are being developed. The function of these semiconductor devices is based on the fact that when an ion is absorbed at the surface of the gate insulator (oxide) a corresponding charge will add at the semiconductor... [Pg.193]

In formamide electrolyte containing fluoride ion, the starting anodization current does not drop instantly as observed in aqueous bath. The gas evolution which is indicative of electronic conduction was observed at the anode. The anodization current drops steeply thereafter due to the initial formation of an insulating oxide layer, see Fig. 5.10. In this region, electronic conduction decreases due to the blocking action of the formed oxide, and ionic conduction increases. Once the oxide layer is completely formed over the entire exposed surface of the anode, electronic conduction becomes negligible and ionic conduction dominates the mechanistic behavior. Nanotube formation reduces the surface area available for anodization with a correlated decrease in current density, while deepening of the pore occurs. [Pg.296]

Several insulator oxides, such as AI2O3 and Si02, can hydrate reversibly to give hydroxides of the type A1(0H)3, AIO(OH), or Si(OH)4, and, not surprisingly, can catalyze dehydration reactions such as the conversion of alcohols to olefins at elevated temperatures ... [Pg.123]

It is usual to operate an aqueous-medium fuel cell under pressure at temperatures well in excess of the normal boiling point, as this gives higher reactant activities and lower kinetic barriers (overpotential and reactant diffusion rates). An alternative to reliance on catalytic reduction of overpotential is use of molten salt or solid electrolytes that can operate at much higher temperatures than can be reached with aqueous cells. The ultimate limitations of any fuel cell are the thermal and electrochemical stabilities of the electrode materials. Metals tend to dissolve in the electrolyte or to form electrically insulating oxide layers on the anode. Platinum is a good choice for aqueous acidic media, but it is expensive and subject to poisoning. [Pg.313]

Insulator Oxide Si02, AI2O3, Ti02, Ta205, B2O3, P2O5... [Pg.210]

The current density-voltage relationship of a contact in which a thin layer of insulating oxide covers the metal and the selective layer is electronically conducting follows the Fowler-Nordheim equation, which describes the tunneling current at metal-insulator-metal junctions. [Pg.245]

Transmission IR still remains the best method for examining insulating oxide surfaces and over the past decade there has developed a considerable understanding of many surfaces, particularly those of silica, alumina, molecular sieves and complex catalysts. The objective of this paper, therefore, will be to demonstrate how some of the recent advances have been made. Clearly it is not possible to discuss all the materials studied by transmission IR and the author has chosen to use the surface properties of silica to illustrate the type of understanding that is now available. [Pg.2]


See other pages where Insulating oxide is mentioned: [Pg.50]    [Pg.122]    [Pg.345]    [Pg.190]    [Pg.127]    [Pg.95]    [Pg.126]    [Pg.317]    [Pg.340]    [Pg.341]    [Pg.341]    [Pg.146]    [Pg.322]    [Pg.147]    [Pg.351]    [Pg.106]    [Pg.572]    [Pg.41]    [Pg.101]    [Pg.217]    [Pg.263]    [Pg.37]    [Pg.86]    [Pg.322]    [Pg.324]    [Pg.331]    [Pg.115]    [Pg.437]    [Pg.29]    [Pg.88]    [Pg.141]    [Pg.36]    [Pg.326]    [Pg.345]    [Pg.326]    [Pg.236]   


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Insulating layers aluminium oxide

Insulator oxides, acid-base

Insulator oxides, acid-base reactions

Insulators ceramic oxides

Oxides insulator, catalysts

Simple Insulator Oxides

Superconducting Metal Oxide (SMO) Lattice-Matched Insulators

Thermal insulating oxide materials

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