Mechanical planarization

Oliver, M. R., Chemical-Mechanical Planarization of Semiconductor Materials, Berlin Springer Series in Material Science, 2004. 

Luo, J. and Dorfeld, D. A., Material Removal Regions in Chemical Mechanical Planarization for Sub-micron Integrated Circuit Fabrication Coupling Effects of Slurry Chemicals, Abrasive Size Distribution and Wafer-Pad Contact Area, IEEE Trans. Semicond. Manuf, Vol. 16, No. 1, 2003, pp. 45-56. 

Steigerward, J. M., Muraka, S. R, and Gutmann, R. J., Chemical Mechanical Planarization of Microelectronic Materials, New York WUey, 1997. 

Zhang, R, Busnaina, A. A., Reng, J., and Rury, M. A., Particle Adhesion Force in CMP and Subsequent Cleaning Processes," Proceedings, 4th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, Santa Clara, CA, Reb. 11-12,1999, pp. 61-64. 

Sundararajan, S. andXhakurta, D., Two-Dimensional Wafer-Scale Chemical-Mechanical Planarization Models Based on Lubrication Theory and Mass Transport, Journal of the Electrochemical Society, Vol. 146, No. 2, 1999, pp. 761-766. 

To evaluate the catalytic activity or to investigate the reaction mechanism, planar electrodes with well-defined characteristics such as surface area, surface and bulk compositions, and crystalline structure have often been examined in acidic electrolyte solutions. An appreciable improvement in CO tolerance has been found at Pt with adatoms such as Ru, Sn, and As [Watanabe and Motoo, 1975a, 1976 Motoo and Watanabe, 1980 Motoo et al., 1980 Watanabe et al., 1985], Pt-based alloys Pt-M (M = Ru, Rh, Os, Sn, etc.) [Ross et al., 1975a, b Gasteiger et al., 1994, 1995 Grgur et al., 1997 Ley et al., 1997 Mukeijee et al., 2004], and Pt with oxides (RuO cHy) [Gonzalez and Ticianelli, 2005 Sughnoto et al., 2006]. 

The acceptance of chemical mechanical planarization (CMP) as a manufacturable process for state-of-the-art interconnect technology has made it possible to rely on CMP technology for numerous semiconductor manufacturing process applications. These applications include shallow trench isolation (STI), deep trench capacitors, local tungsten interconnects, inter-level-dielectric (ILD) planarization, and copper damascene. In this chapter. 

B. Withers, E. Zhoa, R. Jairath, A Wide Margin CMP and Clean Process for Shallow Trench Isolation Applications, 1998 Proceedings of the Third International Chemical-Mechanical Planarization for VLSI Multilevel Interconnection Conference (CMP-MIC), Santa Clara, CA, pp. 319-327, Feb. 19-20,1998. 

A. R. Baker, The Origin of the Edge Effect in Chemical Mechanical Planarization, presented at the ECS Fall 1996 meeting, San Antonio, TX. 

Y. Zhang, P. Parikh, P. Golobtsov, B. Stephenson, M. Bonsaver, J. Lee, M. Hoffinan, Wafer Shape Measurement and Its Influence on Chemical Mechanical Planarization, Meeting Abstracts of the Fall Meeting of the Electrochemical Society, Abstract No. 250, pp. 629-630, San Antonio, TX, October 6-11, 1996. 

H. Mizuno, Slurry Delivery System Design for Tungsten Chemical Mechanical planarization Manufacturing Site, presented at ISSM, Oct. 10, 1997. 

Y. Gotkis, Post-CMP Surface Defectivity Classification, Origin, and Defect Reduction, IPEC Planar PACRIM Chemical Mechanical Planarization Symposium, Hsin Chu, Taiwan Sept. 30-Oct. 1, 1997. 

A. Hu, X. Zhang, E. Sachs, P. Renteln, Application of Run by Run Controller to the Chemical-Mechanical Planarization Process, IEEE Proceeding of the 15th International... 

A. Hu, R. Chan, S. Chiao, Real Time Control of Chemical Mechanical Planarization (CMP) Process, First International Chemical-Mechanical Polish (CMP) for VLSI Multilevel Interconnection Conference, pp. 235-240, Feb. 22-23, 1996. 

Capitanio et al, Defect Reduction During Chemical Mechanical Planarization by Incorporation of Slurry Filtration, Proceedings of SEMICONlWest Contamination in Liquid Chemical Distribution Systems Workshop (July 1998). 

D. Bramano and L. Racz Numerical Flow-Visualization of Slurry in a Chemical Mechanical Planarization Process, Proc. of CMP-MIC, pp. 185-192, Santa Clara, CA, Feb. 1998. 

Baker, A. (1997). The origin of the edge effect in chemical mechanical planarization. Electrochem. Soc. Proc. 96-122, p. 228. 

As the integrated circuit (IC) industry has chosen chemical mechanical planarization (CMP) as one of the indispensable processes in the generations of transistor gate lengths equal to or smaller than 0.35/im, it is imperative that the CMP-related process problems be investigated and... 

Microelectronic Applications of Chemical Mechanical Planarization, Edited by Yuzhuo Li Copyright 2008 John Wiley Sons, Inc. 

Dornfeld DA, Luo J. Integrated Modeling of Chemical Mechanical Planarization for Sub-Micron IC Fabrication. Springer 2004. p 16. 

Zantye PB, Kumar A, Sikder AK. Chemical mechanical planarization for microelectronics applications. Mater Sci Eng R Rep 2004 45(3-6) 89-220. 

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