Chemical mechanical planarization models

Sundararajan, S. andXhakurta, D., Two-Dimensional Wafer-Scale Chemical-Mechanical Planarization Models Based on Lubrication Theory and Mass Transport, Journal of the Electrochemical Society, Vol. 146, No. 2, 1999, pp. 761-766. 

Thakurta G, Borst CL, Schwendeman DW, Gutmann RJ, Gill WN. Pad porosity, compressibility and slurry delivery effects in chemical-mechanical planarization modeling and experiments. Thin Solid Films 2000 366 181-190. 

Thakurta DG, Schwendeman DW, Gutmann RJ, Shankar S, Jiang L, Gill WN. Three-dimensional wafer-scale copper chemical-mechanical planarization model. Thin Solid Films 2002 414(l) 78-90. 

Thakurta, D.G., Schwendeman, D.W., Gutmann, R.J., et al., 2002. Three-dimensional wafer-scale copper chemical—mechanical planarization model. Thin Solid Films 414, 78—90. 

Luo, J., Domfeld, D.A., 2003. Effects of abrasive size distribution in chemical mechanical planarization modeling and verification. IEEE Trans. Semicond. Manuf. 16 (3), 469—476. 

Dornfeld DA, Luo J. Integrated Modeling of Chemical Mechanical Planarization for Sub-Micron IC Fabrication. Springer 2004. p 16. 

Choi J, Dornfeld DA. Modeling of pattern density dependent pressure nonuniformity at a die scale for ILD chemical mechanical planarization. Mater Res Soc Symp Proc 2004 816 K4.4.1-K4.4.6. 

Fu G, Chandra A. An analytical dishing and step height reduction model for chemical mechanical planarization (CMP). IEEE Trans Semicond Manuf 2003 16(3) 477-485. 

Wang C, Sherman P, Chandra A. Modeling and analysis of pad surface topography and slurry particle size distribution effects on material removal rate (MRR) in chemical mechanical planarization. Int J Manuf Technol Manag 2005 7(5/6) 504-529. 

Saxena R, Thakurta DG, Gutmann RJ, Gill WN. A feature scale model for chemical mechanical planarization of damascene structures. Thin Solid Films 2004 449 192-206. 

Paul E. Modeling removal rates in chemical-mechanical planarization. Proceedings of the Twentieth International VLSI Multilevel Interconnection Conference VMIC, Sept 22-25 2003. p 277-283. 

J. Grillaert, M. Meuris, E. Vrancken, N. Heylen, K. Devriendt, W.F. Marc Hqms The Use of a Semi-Empirical CMP Model for the Optimization of the SH Module, Proceedings of Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference (CMP-MIC), 1999,pp.l05-112... 

Johnson, J., et al., 2011. Slurry particle agglomeration model for chemical mechanical planar-iation (CMP). In Seoul, International Conference on Planarization Technology (ICPT). 

Figure 12.6 Material removal rate (MRR) as a function of abrasive concentration. Reproduced from Luo Jianfeng, Integrated Modeling of Chemical Mechanical Planarization/ Polishing for Integrated Circuit Fabrication (PhD Dissertation), 2003, Figure 5.11, page 178, with permission from University of California at Berkeiey.

Johnson, J.M., Boning, D., 2010. Slurry particle agglomeration model for chemical mechanical planarization (CMP). MRS Online Proc. Libr. 1249. E04—E03. 

P. A. Burke, Semi-Empirical Modeling of Si02 Chemical-Mechanical Polishing Planarization, Proc. VMIC Conf, pp. 379-384, Santa Clara, CA, June 1991. 

D. Ouma, Modeling of Chemical Mechanical Polishing for Dielectric Planarization, Ph.D. Thesis, Elect. Eng. and Comp. Sci. Dept., MIT, Nov. 1998. 

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