Chemical mechanical planarization tungsten

The acceptance of chemical mechanical planarization (CMP) as a manufacturable process for state-of-the-art interconnect technology has made it possible to rely on CMP technology for numerous semiconductor manufacturing process applications. These applications include shallow trench isolation (STI), deep trench capacitors, local tungsten interconnects, inter-level-dielectric (ILD) planarization, and copper damascene. In this chapter. 

H. Mizuno, Slurry Delivery System Design for Tungsten Chemical Mechanical planarization Manufacturing Site, presented at ISSM, Oct. 10, 1997. 

Shen JJ, Costas WB, Cook LM. The effect of post chemical mechanical planarization buffing on defect density of tungsten and oxide wafers. J Electorchem Soc 1998 145(12) 4240-4243. 

Ramarajan S, Li Y, Hariharaputhiran M, Babu SV, Her YS. The role of alumina particle density in chemical mechanical planarization of copper, tantalum, and tungsten disks and films. J CMP On-Chip Interconnect IMIC 2000 l(l) 28-38. 

Testa, F., Coetsier, C., Carretier, E., Ennahali, M., Lahorie, B., Moulin, P., 2014. Recycling a slurry for reuse in chemical mechanical planarization of tungsten wafer effect of chemical adjustments and comparison between static and dynamic experiments. Microelectron. Eng. 113, 114-122. 

Chemical mechanical jwlishing (CMP) has been widely accepted for oxide and metal layer planarization to eliminate step coverage concerns and improve lithographic resolution. Tungsten (W) CMP is used to remove the excess W deposited by nonselective chemical vapx>r deposition (CVD) for the formation of vias in IC multilevel interconnects. 

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